Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm

Fabiola A. Camargo (1) , Jessica Barrientos-Barria (1) , Ghaya Baili (2) , Loïc Morvan (2) , Daniel Dolfi (2) , Isabelle Sagnes (3) , Arnaud Garnache (4, 5) , Fabien Bretenaker (6) , Patrick Georges (1) , Gaëlle Lucas-Leclin (1)

1 Laboratoire Charles Fabry / Lasers
2 Thales Research and Technology [Palaiseau]
3 LPN - Laboratoire de photonique et de nanostructures
4 IES - Institut d’Electronique et des Systèmes
5 TéHO - Térahertz, hyperfréquence et optique
6 LAC - Laboratoire Aimé Cotton

We demonstrate the dual-­‐frequency emission of a diode-­‐pumped vertical external-­‐cavity semiconductor laser operating at 852 nm, dedicated to the coherent population trapping of cesium atoms. It is based on a single laser cavity sustaining the oscillation of two adjacent, orthogonally-­polarized, modes. Two coherent laser lines distant from a few GHz are obtained in a simple and compact configuration. Up to 20 mW has been achieved at each frequency.

Domaines: Optique [physics.optics]

Fabiola A. Camargo, Jessica Barrientos-Barria, Ghaya Baili, Loïc Morvan, Daniel Dolfi, et al.. Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm. LASE '12 / Vertical External Cavity Surface Emitting Semiconductor Lasers, 2012, xx, United States. ⟨hal-00822204⟩