Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm

Abstract : We demonstrate the dual-­‐frequency emission of a diode-­‐pumped vertical external-­‐cavity semiconductor laser operating at 852 nm, dedicated to the coherent population trapping of cesium atoms. It is based on a single laser cavity sustaining the oscillation of two adjacent, orthogonally-­polarized, modes. Two coherent laser lines distant from a few GHz are obtained in a simple and compact configuration. Up to 20 mW has been achieved at each frequency.
Type de document :
Communication dans un congrès
LASE '12 / Vertical External Cavity Surface Emitting Semiconductor Lasers, 2012, xx, United States
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https://hal-iogs.archives-ouvertes.fr/hal-00822204
Contributeur : Gaëlle Lucas-Leclin <>
Soumis le : mardi 14 mai 2013 - 11:50:24
Dernière modification le : mercredi 30 mai 2018 - 09:27:24

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  • HAL Id : hal-00822204, version 1

Citation

Fabiola Camargo, Jessica Barrientos-Barria, Ghaya Baili, Loïc Morvan, Daniel Dolfi, et al.. Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm. LASE '12 / Vertical External Cavity Surface Emitting Semiconductor Lasers, 2012, xx, United States. 〈hal-00822204〉

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