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Conference papers

Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm

Abstract : We demonstrate the dual-­‐frequency emission of a diode-­‐pumped vertical external-­‐cavity semiconductor laser operating at 852 nm, dedicated to the coherent population trapping of cesium atoms. It is based on a single laser cavity sustaining the oscillation of two adjacent, orthogonally-­polarized, modes. Two coherent laser lines distant from a few GHz are obtained in a simple and compact configuration. Up to 20 mW has been achieved at each frequency.
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Conference papers
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https://hal-iogs.archives-ouvertes.fr/hal-00822204
Contributor : Gaëlle Lucas-Leclin <>
Submitted on : Tuesday, May 14, 2013 - 11:50:24 AM
Last modification on : Wednesday, September 16, 2020 - 5:45:50 PM

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  • HAL Id : hal-00822204, version 1

Citation

Fabiola Camargo, Jessica Barrientos-Barria, Ghaya Baili, Loïc Morvan, Daniel Dolfi, et al.. Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm. LASE '12 / Vertical External Cavity Surface Emitting Semiconductor Lasers, 2012, xx, United States. ⟨hal-00822204⟩

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