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Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm

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Abstract

We demonstrate the dual-­‐frequency emission of a diode-­‐pumped vertical external-­‐cavity semiconductor laser operating at 852 nm, dedicated to the coherent population trapping of cesium atoms. It is based on a single laser cavity sustaining the oscillation of two adjacent, orthogonally-­polarized, modes. Two coherent laser lines distant from a few GHz are obtained in a simple and compact configuration. Up to 20 mW has been achieved at each frequency.
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Dates and versions

hal-00822204 , version 1 (14-05-2013)

Identifiers

  • HAL Id : hal-00822204 , version 1

Cite

Fabiola A. Camargo, Jessica Barrientos-Barria, Ghaya Baili, Loïc Morvan, Daniel Dolfi, et al.. Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm. LASE '12 / Vertical External Cavity Surface Emitting Semiconductor Lasers, 2012, xx, United States. ⟨hal-00822204⟩
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