Single-Frequency CW Vertical External Cavity Surface Emitting Semiconductor Laser at 1003 nm and 501nm by Intracavity Frequency Doubling - Groupe Lasers et Biophotonique Access content directly
Journal Articles Applied Physics B - Laser and Optics Year : 2007

Single-Frequency CW Vertical External Cavity Surface Emitting Semiconductor Laser at 1003 nm and 501nm by Intracavity Frequency Doubling

Abstract

This work reports single-frequency laser oscillation at λ = 1003.4 nm of a diode-pumped vertical external cavity surface-emitting semiconductor laser for metrological applications. A low thermal resistance of the semiconductor active component is achieved by solid-liquid interdiffusion bonding onto a SiC substrate. The spectro-temporal dynamics of the laser is theoretically studied. Experimentally, an output power of 1.7 W is demonstrated in free running operation, and up to 500 mW in a true single longitudinal mode. Furthermore, single-frequency laser emission at λ = 501.7 nm is obtained by intracavity frequency doubling, resulting in a total output power as high as 62mW.
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Dates and versions

hal-00709941 , version 1 (11-08-2023)

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Mathieu Jacquemet, Manuela Domenech, Gaëlle Lucas-Leclin, Patrick Georges, Jean Dion, et al.. Single-Frequency CW Vertical External Cavity Surface Emitting Semiconductor Laser at 1003 nm and 501nm by Intracavity Frequency Doubling. Applied Physics B - Laser and Optics, 2007, 86, pp.503-510. ⟨10.1007/s00340-006-2499-0⟩. ⟨hal-00709941⟩
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