Single-Frequency CW Vertical External Cavity Surface Emitting Semiconductor Laser at 1003 nm and 501nm by Intracavity Frequency Doubling

Mathieu Jacquemet (1) , Manuela Domenech (1) , Gaëlle Lucas-Leclin (1) , Patrick Georges (1) , Jean Dion (2) , Martin Strassner (2) , Isabelle Sagnes (2) , Arnaud Garnache (3, 4)

1 Laboratoire Charles Fabry de l'Institut d'Optique / Elsa
2 LPN - Laboratoire de photonique et de nanostructures
3 IES - Institut d’Electronique et des Systèmes
4 TéHO - Térahertz, hyperfréquence et optique

This work reports single-frequency laser oscillation at λ = 1003.4 nm of a diode-pumped vertical external cavity surface-emitting semiconductor laser for metrological applications. A low thermal resistance of the semiconductor active component is achieved by solid-liquid interdiffusion bonding onto a SiC substrate. The spectro-temporal dynamics of the laser is theoretically studied. Experimentally, an output power of 1.7 W is demonstrated in free running operation, and up to 500 mW in a true single longitudinal mode. Furthermore, single-frequency laser emission at λ = 501.7 nm is obtained by intracavity frequency doubling, resulting in a total output power as high as 62mW.

Domains: Optics [physics.optics]

Mathieu Jacquemet, Manuela Domenech, Gaëlle Lucas-Leclin, Patrick Georges, Jean Dion, et al.. Single-Frequency CW Vertical External Cavity Surface Emitting Semiconductor Laser at 1003 nm and 501nm by Intracavity Frequency Doubling. Applied Physics B - Laser and Optics, 2007, 86, pp.503-510. ⟨10.1007/s00340-006-2499-0⟩. ⟨hal-00709941⟩