Simulation of a Time-Domain OCT device for Through Silicon Via (TSV) characterization - Institut d'Optique Graduate School
Conference Papers Year : 2018

Simulation of a Time-Domain OCT device for Through Silicon Via (TSV) characterization

Wolfgang Iff
Laboratoire Charles Fabry / Naphel
Centre de Nanosciences et de Nanotechnologies [Orsay]
Jean-Paul Hugonin
  • Function : Author
Laboratoire Charles Fabry / Naphel
Christophe Sauvan
Laboratoire Charles Fabry / Naphel
CV
Mondher Besbes
Laboratoire Charles Fabry / Naphel
Pierre Chavel
Laboratoire Hubert Curien
Guillaume Vienne
  • Function : Author
UnitySC
Laurent Milord
  • Function : Author
UnitySC

Domains

Optics [physics.optics] Optics / Photonic

Christophe Sauvan  : Connect in order to contact the contributor

https://hal-iogs.archives-ouvertes.fr/hal-04278047

Submitted on : Thursday, November 9, 2023-5:38:01 PM

Last modification on : Thursday, September 5, 2024-8:14:22 AM

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hal-04278047 , version 1 (09-11-2023)

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  • HAL Id : hal-04278047 , version 1

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Wolfgang Iff, Jean-Paul Hugonin, Christophe Sauvan, Mondher Besbes, Pierre Chavel, et al.. Simulation of a Time-Domain OCT device for Through Silicon Via (TSV) characterization. The European Optical Society Annual Meeting 2018 (EOSAM2018), Oct 2018, Delft, Netherlands. ⟨hal-04278047⟩

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UNIV-ST-ETIENNE IOGS CNRS PARISTECH LCFIO LCF_NAPHEL UNIV-PARIS-SACLAY UDL UP-SCIENCES ANR GS-PHYSIQUE INSTITUT-SCIENCES-LUMIERE C2N LABORATOIRE-HUBERT-CURIEN
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