Femtosecond laser excitation dynamics of the semiconductor-metal phase transition in VO2

Michael F. Becker (1) , A. Bruce Buckman (1) , Rodger M. Walser (1) , Thierry Lépine (2) , Patrick Georges (2) , Alain Brun (2)

1 ECE - Department of Electrical and Computer Engineering - University of Texas
2 Laboratoire Charles Fabry de l'Institut d'Optique / Elsa

We have measured the subpicosecond optical response of a solid‐state, semiconductor‐to‐metal phase transition excited by femtosecond laser pulses. We have determined the dynamic response of the complex refractive index of VO2 thin films by making pump‐probe optical transmission and reflection measurements at 780 nm. The phase transition was found to be largely prompt with the optical properties of the high‐temperature metallic state being attained within 5 ps. The ultrafast change in complex refractive index enables ultrafast optical switchingdevices in VO2.

Domains: Physics [physics]; Physics [physics]; Optics [physics.optics]

Michael F. Becker, A. Bruce Buckman, Rodger M. Walser, Thierry Lépine, Patrick Georges, et al.. Femtosecond laser excitation dynamics of the semiconductor-metal phase transition in VO2. Journal of Applied Physics, 1996, 79 (5), pp.2404-2408. ⟨10.1063/1.361167⟩. ⟨hal-00761582⟩