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Photorefractive measurements in electron irradiated semi-insulating GaAs

Abstract : We present photorefractive measurements at 1.06 mgrm and 1.3 mgrm performed in electron-irradiated GaAs. Irradiation with electrons of kinetic energies ge1 MeV introduces intrinsic electrically active defects which modify the Fermi-level position and allow to modify the electron-hole competition mechanism of the photorefractive effect. Furthermore, it is shown that the optical absorption in the 1.3-1.5 mgrm spectral range can be increased, which might allow to enlarge the useful spectral range of GaAs towards optical telecommunication windows. The native and irradiation-induced defects are assessed by electron paramagnetic resonance and optical absorption spectroscopy conducted at T=300 K and 77 K. The direct influence of an irradiation-induced mid-gap defect on the photorefractive effect is experimentally and theoretically demonstrated
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Philippe Delaye, H.J. von Bardeleben, Gérald Roosen. Photorefractive measurements in electron irradiated semi-insulating GaAs. Applied physics. A, Materials science & processing, Springer Verlag, 1994, 59, pp.357-364. ⟨10.1007/BF00331712⟩. ⟨hal-00677572v2⟩

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