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Journal articles
Photorefractive measurements in electron irradiated semi-insulating GaAs
Abstract : We present photorefractive measurements at 1.06 mgrm and 1.3 mgrm performed in electron-irradiated GaAs. Irradiation with electrons of kinetic energies ge1 MeV introduces intrinsic electrically active defects which modify the Fermi-level position and allow to modify the electron-hole competition mechanism of the photorefractive effect. Furthermore, it is shown that the optical absorption in the 1.3-1.5 mgrm spectral range can be increased, which might allow to enlarge the useful spectral range of GaAs towards optical telecommunication windows. The native and irradiation-induced defects are assessed by electron paramagnetic resonance and optical absorption spectroscopy conducted at T=300 K and 77 K. The direct influence of an irradiation-induced mid-gap defect on the photorefractive effect is experimentally and theoretically demonstrated
https://hal-iogs.archives-ouvertes.fr/hal-00677572
Contributor : Marie-Laure Edwards <>
Submitted on : Thursday, March 8, 2012 - 5:45:50 PM
Last modification on : Wednesday, September 16, 2020 - 5:40:39 PM
Long-term archiving on: : Thursday, June 14, 2012 - 5:31:44 PM
Contributor : Marie-Laure Edwards <>
Submitted on : Thursday, March 8, 2012 - 5:45:50 PM
Last modification on : Wednesday, September 16, 2020 - 5:40:39 PM
Long-term archiving on: : Thursday, June 14, 2012 - 5:31:44 PM
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