Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm - Institut d'Optique Graduate School Access content directly
Conference Papers Year : 2012

Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm

Abstract

We present in this work the study of a short vertical external cavity semiconductor laser in single longitudinal operation at 852 nm without intracavity elements. Two different configurations were studied, a plane-plane configuration, stabilized by the thermal lens and a plane-concave configuration. The influence of the output coupler transmission and the thermal lens has been studied. In the plane concave configuration we have demonstrated more than 100mW in stable single frequency operation using a very compact cavity emitting around 852 nm.
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Dates and versions

hal-00673145 , version 1 (22-02-2012)

Identifiers

Cite

Fabiola A. Camargo, Sylvie Janicot, Isabelle Sagnes, Arnaud Garnache, Patrick Georges, et al.. Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm. LASE - Vertical External Cavity Surface Emitting Lasers (VECSELs)II, Jan 2012, San Francisco, United States. pp.82420F, ⟨10.1117/12.908738⟩. ⟨hal-00673145⟩
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