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First indirectly diode pumped Yb:SFAP laser, reaching the watt level at 985 nm

Abstract : We present the first demonstration of the three-level-laser transition at 985 nm in an Yb:S-FAP crystal intracavity pumped at 914 nm. We obtained 940 mW output power at 985 nm for 20 W incident pump power at 808 nm.
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https://hal-iogs.archives-ouvertes.fr/hal-00584518
Contributor : François Balembois Connect in order to contact the contributor
Submitted on : Wednesday, September 14, 2022 - 3:32:09 PM
Last modification on : Saturday, October 8, 2022 - 3:33:17 AM

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Marc Castaing, François Balembois, Patrick Georges, Thierry Georges, Kathleen Schaffers, et al.. First indirectly diode pumped Yb:SFAP laser, reaching the watt level at 985 nm. Conference on Lasers and Electro-Optics (CLEO) 2008, May 2008, San José, United States. ⟨10.1109/CLEO.2008.4551405⟩. ⟨hal-00584518⟩

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