First indirectly diode pumped Yb:SFAP laser, reaching the watt level at 985 nm
Abstract
We present the first demonstration of the three-level-laser transition at 985 nm in an Yb:S-FAP crystal intracavity pumped at 914 nm. We obtained 940 mW output power at 985 nm for 20 W incident pump power at 808 nm.
| Origin | Files produced by the author(s) |
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