First indirectly diode pumped Yb:SFAP laser, reaching the watt level at 985 nm - Archive ouverte HAL Access content directly
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First indirectly diode pumped Yb:SFAP laser, reaching the watt level at 985 nm

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Abstract

We present the first demonstration of the three-level-laser transition at 985 nm in an Yb:S-FAP crystal intracavity pumped at 914 nm. We obtained 940 mW output power at 985 nm for 20 W incident pump power at 808 nm.
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hal-00584518 , version 1 (14-09-2022)

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Attribution - NonCommercial - CC BY 4.0

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Marc Castaing, François Balembois, Patrick Georges, Thierry Georges, Kathleen Schaffers, et al.. First indirectly diode pumped Yb:SFAP laser, reaching the watt level at 985 nm. Conference on Lasers and Electro-Optics (CLEO) 2008, May 2008, San José, United States. ⟨10.1109/CLEO.2008.4551405⟩. ⟨hal-00584518⟩
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