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First indirectly diode pumped Yb:SFAP laser, reaching the watt level at 985 nm

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https://hal-iogs.archives-ouvertes.fr/hal-00584518
Contributor : François Balembois <>
Submitted on : Friday, April 8, 2011 - 5:08:07 PM
Last modification on : Wednesday, September 16, 2020 - 5:43:05 PM

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  • HAL Id : hal-00584518, version 1

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Marc Castaing, François Balembois, Patrick Georges, Thierry Georges, Kathleen Schaffers, et al.. First indirectly diode pumped Yb:SFAP laser, reaching the watt level at 985 nm. Conference on Lasers and Electro-Optics (CLEO) 2008, May 2008, San José, United States. ⟨hal-00584518⟩

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