Enhanced absorption by nanostructured silicon - Institut d'Optique Graduate School Access content directly
Journal Articles Applied Physics Letters Year : 2008

Enhanced absorption by nanostructured silicon


Some applications such as ultrafast detectors or high efficiency photovoltaics require absorption by thin films. However, close to the bandgap, silicon absorbs very poorly. In this letter, we show that the absorption of a 100 nm slab can be as high as 50% in the range of wavelengths 700-830 nm when using a periodic structure properly designed.
Fichier principal
Vignette du fichier
18B_00343.pdf (305.77 Ko) Télécharger le fichier
Origin Publisher files allowed on an open archive

Dates and versions

hal-00574367 , version 1 (16-07-2013)



S. Bandiera, D. Jacob, T. Muller, François Marquier, Marine Laroche, et al.. Enhanced absorption by nanostructured silicon. Applied Physics Letters, 2008, 93 (19), pp.193103. ⟨10.1063/1.3021480⟩. ⟨hal-00574367⟩
197 View
320 Download



Gmail Mastodon Facebook X LinkedIn More