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Journal articles

Enhanced absorption by nanostructured silicon

S. Bandiera 1 D. Jacob 1 T. Muller 1 François Marquier 1, 2 Marine Laroche 1 Jean-Jacques Greffet 2, 1
1 EM2C - Laboratoire d'Énergétique Moléculaire et Macroscopique, Combustion
2 Laboratoire Charles Fabry de l'Institut d'Optique / Naphel
LCFIO - Laboratoire Charles Fabry de l'Institut d'Optique
Abstract : Some applications such as ultrafast detectors or high efficiency photovoltaics require absorption by thin films. However, close to the bandgap, silicon absorbs very poorly. In this letter, we show that the absorption of a 100 nm slab can be as high as 50% in the range of wavelengths 700-830 nm when using a periodic structure properly designed.
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Contributor : Henri Benisty Connect in order to contact the contributor
Submitted on : Tuesday, July 16, 2013 - 6:25:02 PM
Last modification on : Thursday, June 17, 2021 - 3:48:06 AM
Long-term archiving on: : Thursday, October 17, 2013 - 2:25:09 AM

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S. Bandiera, D. Jacob, T. Muller, François Marquier, Marine Laroche, et al.. Enhanced absorption by nanostructured silicon. Applied Physics Letters, American Institute of Physics, 2008, 93 (19), pp.193103. ⟨10.1063/1.3021480⟩. ⟨hal-00574367⟩

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