Skip to Main content Skip to Navigation
Conference papers

A Foundry-Compatible Plasmonic Material Platform Based on Heavily Doped Epitaxial Germanium-on-Silicon (poster)

Abstract : Replacing metals with thin-film semiconductor materials with high carrier density could led to a new generation of plasmonic devices, where plasmonic elements are integrated with standard electronic platforms [1]. In this framework, the most attractive thin-film materials are those whose growth is compatible with silicon foundry processes and silicon substrates. One notable example is electron-doped germanium (n-Ge), which features a small effective mass of 0.12 and supports heavy doping levels up to 3×1019 cm-3 hence allowing plasma frequencies up to the mid-infrared range. In this work, we measured the optical and electrical transport properties of n-Ge thin films hetero-epitaxially grown on silicon substrates by plasma-enhanced chemical vapor deposition (PE-CVD). From normal-incidence reflectivity measurements and Hall-transport data taken on the as-grown materials as a function of temperature and dopant incorporation levels, we derived a phenomenological model of electron scattering from optical and acoustic phonons, charged impurities (donors and charged dislocations) and neutral impurities (crystal defects and neutral disclocations). The Kramers-Kronig relations were finally employed to calculate the complex dielectric function directly from the optical data in a model-free fashion, in order to perform electromagnetic simulations of plasmonic devices.
Document type :
Conference papers
Complete list of metadatas

https://hal-iogs.archives-ouvertes.fr/hal-01713552
Contributor : Fatima Pereira <>
Submitted on : Tuesday, February 20, 2018 - 4:39:36 PM
Last modification on : Wednesday, September 16, 2020 - 5:38:31 PM

Identifiers

  • HAL Id : hal-01713552, version 1

Citation

Michele Ortolani, Jacopo Frigerio, Leonetta Baldassarre, Valeria Giliberti, Emilie Sakat, et al.. A Foundry-Compatible Plasmonic Material Platform Based on Heavily Doped Epitaxial Germanium-on-Silicon (poster) . 7th International Conference on Surface Plasmon Photonics (SPP7) , May 2015, Jerusalem, Israel. ⟨hal-01713552⟩

Share

Metrics

Record views

140