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Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics (poster)

Jacopo Frigerio 1 Leonetta Baldassarre 2 Emilie Sakat 3, 1 Antonio Samarelli 4 Kevin Gallacher 4 Marco P Fischer 5 Daniele Brida 6 Douglas J Paul 1 Giovanni Isella 1 Paolo Biagioni 7 Michele Ortolani 6 
1 Politecn Milan, LNESS Dipartimento Fis, I-22100 Como, Italy
2 Sapienza@IIT Laboratory - Center for Life Nano Science [Genova]
3 Laboratoire Charles Fabry / Naphel
LCF - Laboratoire Charles Fabry
4 James Watt School of Engineering [Univ Glasgow]
5 Department of Physics and Center for Applied Photonics
6 Dipartimento di Fisica [Roma La Sapienza]
7 INFM-Dipartimento di Fisica-Politecnico di Milano
Abstract : Heavily doped Ge thin films grown on different substrates have been investigated by infrared (IR) reflectometry. Screened plasma frequency and losses have been determined to assess the possibilities and limitations of Ge for mid infrared plasmonic.
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Submitted on : Tuesday, February 20, 2018 - 2:03:50 PM
Last modification on : Saturday, June 25, 2022 - 10:29:39 PM

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IOGS | CNRS | PARISTECH | UNIV-PARIS-SACLAY | INSTITUT-SCIENCES-LUMIERE

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Jacopo Frigerio, Leonetta Baldassarre, Emilie Sakat, Antonio Samarelli, Kevin Gallacher, et al.. Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics (poster). 12th International Conference on Group IV Photonics (GFP), Aug 2015, Vancouver, Canada. pp.94 - 95 ⟨10.1109/Group4.2015.7305964⟩. ⟨hal-01713293⟩

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