Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics (poster) - Archive ouverte HAL Access content directly
Conference Papers Year : 2015

Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics (poster)

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Abstract

Heavily doped Ge thin films grown on different substrates have been investigated by infrared (IR) reflectometry. Screened plasma frequency and losses have been determined to assess the possibilities and limitations of Ge for mid infrared plasmonic.
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Dates and versions

hal-01713293 , version 1 (20-02-2018)

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Cite

Jacopo Frigerio, Leonetta Baldassarre, Emilie Sakat, Antonio Samarelli, Kevin Gallacher, et al.. Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics (poster). 12th International Conference on Group IV Photonics (GFP), Aug 2015, Vancouver, Canada. pp.94 - 95 ⟨10.1109/Group4.2015.7305964⟩. ⟨hal-01713293⟩
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