Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si (Orale) - Archive ouverte HAL Access content directly
Conference Papers Year : 2016

Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si (Orale)

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Abstract

CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.

Dates and versions

hal-01712470 , version 1 (19-02-2018)

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Cite

Leonetta Baldassarre, Emilie Sakat, Monica Bollani, Antonio Samarelli, Kevin Gallacher, et al.. Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si (Orale). 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2016, Copenhagen, Denmark. ⟨10.1109/IRMMW-THz.2016.7758725⟩. ⟨hal-01712470⟩
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