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Conference papers
Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si (Orale)
Leonetta Baldassarre
1
Emilie Sakat
2, 3
Monica Bollani
4
Antonio Samarelli
5
Kevin Gallacher
5
Jacopo Frigerio
6
Giovanni Pellegrini
3
Valeria Giliberti
1
Marco Fischer
7
Daniele Brida
7
Giovanni Isella
4
Douglas Paul
5
Michele Ortolani
1
Paolo Biagioni
3
Leonetta Baldassarre 1
Author
Emilie Sakat 2, 3
Author IdHAL : emilie-sakat ORCID : https://orcid.org/0000-0001-5392-2576
Monica Bollani 4
Author
Antonio Samarelli 5
Author
Kevin Gallacher 5
Author
Jacopo Frigerio 6
Author
Giovanni Pellegrini 3
Author
Valeria Giliberti 1
Author
Michele Ortolani 1
Author
Paolo Biagioni 3
Author
1
Department of Physics [Roma La Sapienza] (via dei Taurini, 19, I-00185 Roma - Italy)
- Università degli Studi di Roma "La Sapienza" [Rome] (Piazzale Aldo Moro 5, 00185 Roma - Italy)
2
Laboratoire Charles Fabry / Naphel (France)
- LCF - Laboratoire Charles Fabry (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
- UP11 - Université Paris-Sud - Paris 11 (Bâtiment 300 - 91405 Orsay cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8501 (France)
- IOGS - Institut d'Optique Graduate School (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
3
INFM-Dipartimento di Fisica-Politecnico di Milano (Piazza L. da Vinci 32, 20133 Milano, Italy - Italy)
4
IFN - CNR Institute for Photonics and Nanotechnologies (Italy)
- CNR - Consiglio Nazionale delle Ricerche [Roma] (Piazzale Aldo Moro,7 - 00185, Roma - Italy)
5
James Watt School of Engineering [Univ Glasgow] (University of Glasgow, G12 8QQ - United Kingdom)
- University of Glasgow (Glasgow G12 8QQ Scotland - United Kingdom)
7
Department of Physics and Center for Applied Photonics (Germany)
- University of Konstanz (78457 Konstanz - Germany)
Abstract : CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.
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Conference papers
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https://hal-iogs.archives-ouvertes.fr/hal-01712470
Contributor : Fatima Pereira <>
Submitted on : Monday, February 19, 2018 - 3:20:28 PM
Last modification on : Friday, July 2, 2021 - 3:45:42 AM
Contributor : Fatima Pereira <>
Submitted on : Monday, February 19, 2018 - 3:20:28 PM
Last modification on : Friday, July 2, 2021 - 3:45:42 AM
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- HAL Id : hal-01712470, version 1
- DOI : 10.1109/IRMMW-THz.2016.7758725
Collections
IOGS | CNRS | LCF_NAPHEL | LCFIO | PARISTECH | INSTITUT-SCIENCES-LUMIERE | GS-ENGINEERING
Citation
Leonetta Baldassarre, Emilie Sakat, Monica Bollani, Antonio Samarelli, Kevin Gallacher, et al.. Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si (Orale). 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2016, Copenhagen, Denmark. ⟨10.1109/IRMMW-THz.2016.7758725⟩. ⟨hal-01712470⟩
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