High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties

Marie-Christine Hugon (1) , Franck Delmotte (1) , Bernard Agius (1) , Eugene A. Irene (2)

1 Laboratoire Charles Fabry de l'Institut d'Optique / Scop
2 Department of Chemistry

Dielectric behavior of films, fabricated by microwave electron cyclotron resonance discharge, has been studied as a function of film thickness on the basis of the current-voltage and the capacitance-voltage characteristics. In the thickness range the resistivity and the critical field for were found not to be sensitive to the film thickness (d) and which was opposite to strong dependence of the dynamic dielectric constant on thickness. To explain the behavior as a function of d, a model based on trapped space charge effects is proposed. The dominant mode of electronic conduction, determined from curves and Arrhenius plots of leakage current, appears to be Poole-Frenkel emission only for thicker films Finally, the spatial profile of fixed charges reveals that interface has a much greater concentration of defects than the bulk film.

Domains: Optics [physics.optics]

Marie-Christine Hugon, Franck Delmotte, Bernard Agius, Eugene A. Irene. High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties. Journal of Vacuum Science and Technology, 1999, 17 (4), pp.1430-1434. ⟨10.1116/1.591100⟩. ⟨hal-00903605⟩