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Submicron-diameter semiconductor pillar microcavities with very high quality factors

Guillaume Lecamp 1 Jean-Paul Hugonin 1 Philippe Lalanne 1 Rémy Braive 2 Spyros Varoutis 2 Sabine Laurent 2 Aristide Lemaître 2 Isabelle Sagnes 2 Gilles Patriarche 2 Isabelle Robert-Philip 2 Izo Abram 2
1 Laboratoire Charles Fabry de l'Institut d'Optique / Naphel
LCFIO - Laboratoire Charles Fabry de l'Institut d'Optique
2 LPN - Laboratoire de photonique et de nanostructures
Abstract : Pillar microcavities are subject to two common fabrication artifacts: Bragg mirror corrugation and oxide deposit cladding. In this letter the authors investigate the impact of these features on the quality factor. A quasiperiodic variation of the quality factor as a function of the pillar diameter is experimentally observed and well described by theory. Moreover, observation of quality factors in excess of 1500, close to the theoretical limit, is reported for 600-nm-diameter GaAs micropillars bounded by AlGaAs/GaAs Bragg mirrors.
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Guillaume Lecamp, Jean-Paul Hugonin, Philippe Lalanne, Rémy Braive, Spyros Varoutis, et al.. Submicron-diameter semiconductor pillar microcavities with very high quality factors. Applied Physics Letters, American Institute of Physics, 2007, 90 (9), pp.091120. ⟨10.1063/1.2711186⟩. ⟨hal-00877855⟩

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