Achievement of ultrahigh quality factors in GaAs photonic crystal membrane nanocavity - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2006

Achievement of ultrahigh quality factors in GaAs photonic crystal membrane nanocavity

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Abstract

The authors realized an ultrahigh quality factor nanocavity in a GaAs membrane with the highest loaded Q reported to date of 250 000 in a side-coupled cavity-waveguide system. This result could be obtained using an original aluminum-free material system combined with a carefully adjusted fabrication technology, yielding a device with small roughness and very good verticality of holes as well as small disorder. The authors show that the intrinsic Q factor is around 3.0x105 using a coupled-mode model.
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Dates and versions

hal-00869911 , version 1 (04-10-2013)

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Evelin Weidner, Sylvain Combrié, Nguyen-Vi-Quynh Tran, Alfredo de Rossi, Julien Nagle, et al.. Achievement of ultrahigh quality factors in GaAs photonic crystal membrane nanocavity. Applied Physics Letters, 2006, 89 (22), pp.221104. ⟨10.1063/1.2390648⟩. ⟨hal-00869911⟩
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