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Achievement of ultrahigh quality factors in GaAs photonic crystal membrane nanocavity

Evelin Weidner 1 Sylvain Combrié 1 Nguyen-Vi-Quynh Tran 1 Alfredo de Rossi 1 Julien Nagle 1 Simone Cassette 1 Anne Talneau 2 Henri Benisty 3
1 Thales Research and Technology [Palaiseau]
2 LPN - Laboratoire de photonique et de nanostructures
3 Laboratoire Charles Fabry de l'Institut d'Optique / Naphel
LCFIO - Laboratoire Charles Fabry de l'Institut d'Optique
Abstract : The authors realized an ultrahigh quality factor nanocavity in a GaAs membrane with the highest loaded Q reported to date of 250 000 in a side-coupled cavity-waveguide system. This result could be obtained using an original aluminum-free material system combined with a carefully adjusted fabrication technology, yielding a device with small roughness and very good verticality of holes as well as small disorder. The authors show that the intrinsic Q factor is around 3.0x105 using a coupled-mode model.
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Evelin Weidner, Sylvain Combrié, Nguyen-Vi-Quynh Tran, Alfredo de Rossi, Julien Nagle, et al.. Achievement of ultrahigh quality factors in GaAs photonic crystal membrane nanocavity. Applied Physics Letters, American Institute of Physics, 2006, 89 (22), pp.221104. ⟨10.1063/1.2390648⟩. ⟨hal-00869911⟩

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