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Journal articles
Photonic crystal laser lift-off GaN light-emitting diodes
Abstract : We report on the fabrication and study of laser lift-off GaN-based light-emitting diodes, thinned down to the microcavity regime, incorporating two-dimensional photonic crystal diffraction gratings. Angle-resolved measurements reveal the photonic behavior of the devices, which strongly depends on the GaN thickness. Data point out the detrimental role of metal absorption. We explore theoretically the possibility to limit this loss channel.
Cited literature [1 references]
https://hal-iogs.archives-ouvertes.fr/hal-00869414
Contributor : Fatima Pereira Connect in order to contact the contributor
Submitted on : Thursday, October 3, 2013 - 11:32:54 AM
Last modification on : Wednesday, September 16, 2020 - 5:43:41 PM
Long-term archiving on: : Friday, April 7, 2017 - 5:33:21 AM
Contributor : Fatima Pereira Connect in order to contact the contributor
Submitted on : Thursday, October 3, 2013 - 11:32:54 AM
Last modification on : Wednesday, September 16, 2020 - 5:43:41 PM
Long-term archiving on: : Friday, April 7, 2017 - 5:33:21 AM
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