Photonic crystal laser lift-off GaN light-emitting diodes

Aurélien David (1, 2) , Tetsuo Fujii (1) , Brendan Moran (1) , Shuji Nakamura (1) , Steven P. Denbaars (1) , Claude Weisbuch (1) , Henri Benisty (2)

1 Materials Department
2 Laboratoire Charles Fabry de l'Institut d'Optique / Naphel

We report on the fabrication and study of laser lift-off GaN-based light-emitting diodes, thinned down to the microcavity regime, incorporating two-dimensional photonic crystal diffraction gratings. Angle-resolved measurements reveal the photonic behavior of the devices, which strongly depends on the GaN thickness. Data point out the detrimental role of metal absorption. We explore theoretically the possibility to limit this loss channel.

Domains: Physics [physics]; Physics [physics]; Optics [physics.optics]

Aurélien David, Tetsuo Fujii, Brendan Moran, Shuji Nakamura, Steven P. Denbaars, et al.. Photonic crystal laser lift-off GaN light-emitting diodes. Applied Physics Letters, 2006, 88 (13), pp.133514. ⟨10.1063/1.2189159⟩. ⟨hal-00869414⟩