Modelling and characterization of heteroepitaxially bonded InP-based structured on SoI for hybrid lasers - Institut d'Optique Graduate School Access content directly
Conference Papers Year : 2013

Modelling and characterization of heteroepitaxially bonded InP-based structured on SoI for hybrid lasers

No file

Dates and versions

hal-00857674 , version 1 (03-09-2013)

Licence

Identifiers

  • HAL Id : hal-00857674 , version 1

Cite

Chengxin Pang, Mondher Besbes, Anne Talneau, A. Itawi, Guang-Hua Duan, et al.. Modelling and characterization of heteroepitaxially bonded InP-based structured on SoI for hybrid lasers. SPIE Optics + Optoelectronics, Apr 2013, Prague, Czech Republic. pp.8781-12. ⟨hal-00857674⟩
77 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More