Modelling and characterization of heteroepitaxially bonded InP-based structured on SoI for hybrid lasers - Archive ouverte HAL Access content directly
Conference Papers Year : 2013

Modelling and characterization of heteroepitaxially bonded InP-based structured on SoI for hybrid lasers

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Physics [physics] Physics [physics] Optics [physics.optics]

Henri Benisty  : Connect in order to contact the contributor

https://hal-iogs.archives-ouvertes.fr/hal-00857674

Submitted on : Tuesday, September 3, 2013-7:28:44 PM

Last modification on : Thursday, December 29, 2022-3:29:00 AM

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hal-00857674 , version 1 (03-09-2013)

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Attribution - CC BY 4.0

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  • HAL Id : hal-00857674 , version 1

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Chengxin Pang, Mondher Besbes, Anne Talneau, A. Itawi, Guang-Hua Duan, et al.. Modelling and characterization of heteroepitaxially bonded InP-based structured on SoI for hybrid lasers. SPIE Optics + Optoelectronics, Apr 2013, Prague, Czech Republic. pp.8781-12. ⟨hal-00857674⟩

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