Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on Silicon

Anne Talneau (1) , Christophe Roblin (1) , A. Itawi (1) , Olivia Mauguin (1) , Ludovic Largeau (1) , G. Beaudoin (1) , Isabelle Sagnes (1) , Gilles Patriarche (1) , Chengxin Pang (2) , Henri Benisty (2)

1 LPN - Laboratoire de photonique et de nanostructures
2 Laboratoire Charles Fabry / Naphel

An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomicplane- thick reconstruction across the InP-Si interface and no degradation of the quantum wells luminescence is demonstrated. Several InP surface preparation procedures have been investigated to ensure an oxide-free bonding. Such a bonding procedure without oxide or metal mediation allows embedding very-high-index-contrast nanostructuration within optic and optoelectronic integrated devices, thus enabling tailored designs enhancing dedicated optical functions. Heteroepitaxial bonding is also similarly obtained on nanopatterned Si surface.VC

Domains: Physics [physics]; Physics [physics]; Optics [physics.optics]

Anne Talneau, Christophe Roblin, A. Itawi, Olivia Mauguin, Ludovic Largeau, et al.. Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on Silicon. Applied Physics Letters, 2013, 102, pp.212101. ⟨10.1063/1.4807890⟩. ⟨hal-00857660⟩