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Journal articles
Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on Silicon
Abstract : An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomicplane-
thick reconstruction across the InP-Si interface and no degradation of the quantum wells
luminescence is demonstrated. Several InP surface preparation procedures have been investigated to
ensure an oxide-free bonding. Such a bonding procedure without oxide or metal mediation allows
embedding very-high-index-contrast nanostructuration within optic and optoelectronic integrated
devices, thus enabling tailored designs enhancing dedicated optical functions. Heteroepitaxial
bonding is also similarly obtained on nanopatterned Si surface.VC
Cited literature [11 references]
https://hal-iogs.archives-ouvertes.fr/hal-00857660
Contributor : Henri Benisty <>
Submitted on : Monday, November 16, 2015 - 1:54:06 PM
Last modification on : Tuesday, December 15, 2020 - 8:56:03 AM
Long-term archiving on: : Friday, April 28, 2017 - 6:41:49 AM
Contributor : Henri Benisty <>
Submitted on : Monday, November 16, 2015 - 1:54:06 PM
Last modification on : Tuesday, December 15, 2020 - 8:56:03 AM
Long-term archiving on: : Friday, April 28, 2017 - 6:41:49 AM
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00857660.pdf
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