Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on Silicon - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2013

Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on Silicon

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Abstract

An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomicplane- thick reconstruction across the InP-Si interface and no degradation of the quantum wells luminescence is demonstrated. Several InP surface preparation procedures have been investigated to ensure an oxide-free bonding. Such a bonding procedure without oxide or metal mediation allows embedding very-high-index-contrast nanostructuration within optic and optoelectronic integrated devices, thus enabling tailored designs enhancing dedicated optical functions. Heteroepitaxial bonding is also similarly obtained on nanopatterned Si surface.VC
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Dates and versions

hal-00857660 , version 1 (16-11-2015)

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Anne Talneau, Christophe Roblin, A. Itawi, Olivia Mauguin, Ludovic Largeau, et al.. Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on Silicon. Applied Physics Letters, 2013, 102, pp.212101. ⟨10.1063/1.4807890⟩. ⟨hal-00857660⟩
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