Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on Silicon

Abstract : An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomicplane- thick reconstruction across the InP-Si interface and no degradation of the quantum wells luminescence is demonstrated. Several InP surface preparation procedures have been investigated to ensure an oxide-free bonding. Such a bonding procedure without oxide or metal mediation allows embedding very-high-index-contrast nanostructuration within optic and optoelectronic integrated devices, thus enabling tailored designs enhancing dedicated optical functions. Heteroepitaxial bonding is also similarly obtained on nanopatterned Si surface.VC
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Applied Physics Letters, American Institute of Physics, 2013, 102, pp.212101. 〈10.1063/1.4807890〉
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Anne Talneau, C. Roblin, A. Itawi, Olivia Mauguin, Ludovic Largeau, et al.. Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on Silicon. Applied Physics Letters, American Institute of Physics, 2013, 102, pp.212101. 〈10.1063/1.4807890〉. 〈hal-00857660〉

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