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Journal Articles Photonics and Nanostructures - Fundamentals and Applications Year : 2013

Nanostructured silicon geometries for directly bonded hybrid III-V-silicon active devices

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Abstract

We discuss geometries with nanostructured cladding for active InP/silicon structures made by hetero-epitaxial bonding, which means that InP is directly bonded to silicon from a silicon-on-insulator without any intermediate layer. Such a cladding features low-index confinement and adds thermal sinking channels to those practised on the InP side. The first approach is a one-dimensional effective medium viewpoint, easily showing why grooves parallel to the waveguide are better. Then, two dimensional nanostructures are examined and found to perform better, given etching constraints. A more sophisticated geometry balancing thermal and optical confinement merits is then introduced thanks to a flip-flop algorithm.
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Dates and versions

hal-00857655 , version 1 (24-08-2022)

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Attribution - NonCommercial - CC BY 4.0

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Chengxin Pang, Henri Benisty. Nanostructured silicon geometries for directly bonded hybrid III-V-silicon active devices. Photonics and Nanostructures - Fundamentals and Applications, 2013, 11 (2), pp.145-156. ⟨10.1016/j.photonics.2012.12.003⟩. ⟨hal-00857655⟩
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