Skip to Main content Skip to Navigation
Journal articles

Nanostructured silicon geometries for directly bonded hybrid III-V-silicon active devices

Chengxin Pang 1 Henri Benisty 1 
1 Laboratoire Charles Fabry / Naphel
LCF - Laboratoire Charles Fabry
Abstract : We discuss geometries with nanostructured cladding for active InP/silicon structures made by hetero-epitaxial bonding, which means that InP is directly bonded to silicon from a silicon-on-insulator without any intermediate layer. Such a cladding features low-index confinement and adds thermal sinking channels to those practised on the InP side. The first approach is a one-dimensional effective medium viewpoint, easily showing why grooves parallel to the waveguide are better. Then, two dimensional nanostructures are examined and found to perform better, given etching constraints. A more sophisticated geometry balancing thermal and optical confinement merits is then introduced thanks to a flip-flop algorithm.
Complete list of metadata

https://hal-iogs.archives-ouvertes.fr/hal-00857655
Contributor : Henri Benisty Connect in order to contact the contributor
Submitted on : Wednesday, August 24, 2022 - 4:01:55 PM
Last modification on : Wednesday, August 24, 2022 - 5:35:50 PM

File

Pang2013.pdf
Files produced by the author(s)

Licence


Distributed under a Creative Commons Attribution - NonCommercial 4.0 International License

Identifiers

Collections

Citation

Chengxin Pang, Henri Benisty. Nanostructured silicon geometries for directly bonded hybrid III-V-silicon active devices. Photonics and Nanostructures - Fundamentals and Applications, Elsevier, 2013, 11 (2), pp.145-156. ⟨10.1016/j.photonics.2012.12.003⟩. ⟨hal-00857655⟩

Share

Metrics

Record views

80

Files downloads

1