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Journal articles

Nanostructured silicon geometries for directly bonded hybrid III-V-silicon active devices

Chengxin Pang 1 Henri Benisty 1
1 Laboratoire Charles Fabry / Naphel
LCF - Laboratoire Charles Fabry
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https://hal-iogs.archives-ouvertes.fr/hal-00857655
Contributor : Henri Benisty Connect in order to contact the contributor
Submitted on : Tuesday, September 3, 2013 - 6:35:21 PM
Last modification on : Wednesday, September 16, 2020 - 5:43:00 PM

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Chengxin Pang, Henri Benisty. Nanostructured silicon geometries for directly bonded hybrid III-V-silicon active devices. Photonics and Nanostructures - Fundamentals and Applications, Elsevier, 2013, 11 (2), pp.145-156. ⟨10.1016/j.photonics.2012.12.003⟩. ⟨hal-00857655⟩

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