GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

Abstract : We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic chemical vapor deposition. This design strongly modifies the distribution of guided modes, as confirmed by angle-resolved measurements. The regime of operation and potential efficiency of such structures are discussed.
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Aurélien David, B. Moran, K. Mcgroddy, E. Matioli, E.L. Hu, et al.. GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth. Applied Physics Letters, American Institute of Physics, 2008, 92 (11), pp.113514. ⟨10.1063/1.2898513⟩. ⟨hal-00818814⟩

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