GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

Aurélien David; B. Moran; K. Mcgroddy; E. Matioli; E.L. Hu; S. Denbaars; S. Nakamura; Claude Weisbuch

GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

Aurélien David ^{1, 2} B. Moran ² K. Mcgroddy ² E. Matioli ² E.L. Hu ² S. Denbaars ² S. Nakamura ² Claude Weisbuch ^{2, 3}

1 Laboratoire Charles Fabry de l'Institut d'Optique / Naphel

LCFIO - Laboratoire Charles Fabry de l'Institut d'Optique

2 Materials Department

3 LPMC - Laboratoire de physique de la matière condensée

Abstract : We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic chemical vapor deposition. This design strongly modifies the distribution of guided modes, as confirmed by angle-resolved measurements. The regime of operation and potential efficiency of such structures are discussed.

Document type :

Journal articles

Domain :

Physics [physics] / Physics [physics] / Optics [physics.optics]

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Submitted on : Tuesday, April 5, 2016 - 3:47:01 PM
Last modification on : Tuesday, April 2, 2019 - 2:16:02 AM
Long-term archiving on : Wednesday, July 6, 2016 - 2:51:51 PM

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GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

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GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

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