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Journal articles
GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth
Abstract : We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic chemical vapor deposition. This design strongly modifies the distribution of guided modes, as confirmed by angle-resolved measurements. The regime of operation and potential efficiency of such structures are discussed.
https://hal-iogs.archives-ouvertes.fr/hal-00818814
Contributor : Henri Benisty Connect in order to contact the contributor
Submitted on : Tuesday, April 5, 2016 - 3:47:01 PM
Last modification on : Wednesday, September 16, 2020 - 5:45:34 PM
Long-term archiving on: : Wednesday, July 6, 2016 - 2:51:51 PM
Contributor : Henri Benisty Connect in order to contact the contributor
Submitted on : Tuesday, April 5, 2016 - 3:47:01 PM
Last modification on : Wednesday, September 16, 2020 - 5:45:34 PM
Long-term archiving on: : Wednesday, July 6, 2016 - 2:51:51 PM
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