GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

Aurélien David (1, 2) , B. Moran (2) , K. Mcgroddy (2) , E. Matioli (2) , E.L. Hu (2) , S. Denbaars (2) , S. Nakamura (2) , Claude Weisbuch (2, 3)

1 Laboratoire Charles Fabry de l'Institut d'Optique / Naphel
2 Materials Department
3 LPMC - Laboratoire de physique de la matière condensée

We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic chemical vapor deposition. This design strongly modifies the distribution of guided modes, as confirmed by angle-resolved measurements. The regime of operation and potential efficiency of such structures are discussed.

Domains: Physics [physics]; Physics [physics]; Optics [physics.optics]

Aurélien David, B. Moran, K. Mcgroddy, E. Matioli, E.L. Hu, et al.. GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth. Applied Physics Letters, 2008, 92 (11), pp.113514. ⟨10.1063/1.2898513⟩. ⟨hal-00818814⟩