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Journal articles
Infuence of a depletion layer on localized surface waves in doped semiconductor nanostructures
Abstract : We report THz polarized reflectivity measurements on a doped GaAs grating made of thin walls with subwavelength dimensions and periodicity. A clear dip appears in the TM-polarized reflectivity spectrum, due to the excitation of a localized surface plasmon-phonon mode along the grating walls. The theoretical model used to describe the electromagnetic response of the grating shows the importance of the depletion layer at the GaAs surface and indicates a high sensitivity of the reflectivity dip frequency to the surface potential.
Cited literature [11 references]
https://hal-iogs.archives-ouvertes.fr/hal-00785285
Contributor : Jean-Jacques Greffet Connect in order to contact the contributor
Submitted on : Tuesday, February 5, 2013 - 6:04:53 PM
Last modification on : Tuesday, March 16, 2021 - 3:42:04 PM
Long-term archiving on: : Monday, June 17, 2013 - 7:45:49 PM
Contributor : Jean-Jacques Greffet Connect in order to contact the contributor
Submitted on : Tuesday, February 5, 2013 - 6:04:53 PM
Last modification on : Tuesday, March 16, 2021 - 3:42:04 PM
Long-term archiving on: : Monday, June 17, 2013 - 7:45:49 PM
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APL.Simon.12.pdf
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