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Journal Articles Physical Review Letters Year : 2012

Epsilon-Near-Zero Mode for Active Optoelectronic Devices

Abstract

The electromagnetic modes of a GaAs quantum well between two AlGaAs barriers are studied. At the longitudinal optical phonon frequency, the system supports a phonon polariton mode confined in the thickness of the quantum well that we call epsilon-near-zero mode. This epsilon-near-zero mode can be resonantly excited through a grating resulting in a very large absorption localized in the single quantum well. We show that the reflectivity can be modulated by applying a voltage. This paves the way to a new class of active optoelectronic devices working in the midinfrared and far infrared at ambient temperature..
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Dates and versions

hal-00785260 , version 1 (12-04-2013)

Identifiers

Cite

Simon Vassant, Alexandre Archambault, François Marquier, Fabrice Pardo, Ulf Gennser, et al.. Epsilon-Near-Zero Mode for Active Optoelectronic Devices. Physical Review Letters, 2012, 109 (23), pp.237401. ⟨10.1103/PhysRevLett.109.237401⟩. ⟨hal-00785260⟩
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