Skip to Main content Skip to Navigation
Journal articles

Epsilon-Near-Zero Mode for Active Optoelectronic Devices

Abstract : The electromagnetic modes of a GaAs quantum well between two AlGaAs barriers are studied. At the longitudinal optical phonon frequency, the system supports a phonon polariton mode confined in the thickness of the quantum well that we call epsilon-near-zero mode. This epsilon-near-zero mode can be resonantly excited through a grating resulting in a very large absorption localized in the single quantum well. We show that the reflectivity can be modulated by applying a voltage. This paves the way to a new class of active optoelectronic devices working in the midinfrared and far infrared at ambient temperature..
Complete list of metadatas

Cited literature [25 references]  Display  Hide  Download

https://hal-iogs.archives-ouvertes.fr/hal-00785260
Contributor : Christophe Sauvan <>
Submitted on : Friday, April 12, 2013 - 5:04:50 PM
Last modification on : Wednesday, September 16, 2020 - 5:43:04 PM
Long-term archiving on: : Saturday, July 13, 2013 - 2:50:08 AM

File

PRL-versionHAL.pdf
Files produced by the author(s)

Identifiers

Collections

Citation

Simon Vassant, Alexandre Archambault, François Marquier, Fabrice Pardo, Ulf Gennser, et al.. Epsilon-Near-Zero Mode for Active Optoelectronic Devices. Physical Review Letters, American Physical Society, 2012, 109 (23), pp.237401. ⟨10.1103/PhysRevLett.109.237401⟩. ⟨hal-00785260⟩

Share

Metrics

Record views

313

Files downloads

813