Coherent dual-frequency emission of a vertical external-cavity semiconductor laser at the cesium D2 line

Fabiola A. Camargo (1) , Jessica Barrientos-Barria (1) , Ghaya Baili (2) , Loïc Morvan (2) , Daniel Dolfi (2) , David Holleville (3) , S. Guérandel (3) , Isabelle Sagnes (4) , Patrick Georges (1) , Gaëlle Lucas-Leclin (1)

1 Laboratoire Charles Fabry / Lasers
2 Thales Research and Technology [Palaiseau]
3 SYRTE - Systèmes de Référence Temps Espace
4 LPN - Laboratoire de photonique et de nanostructures

We describe the dual-frequency and dual-polarization emission of a diode-pumped vertical external-cavity semiconductor laser at 852 nm dedicated to the coherent population trapping of cesium atoms. The output power reaches ∼20 mW on each frequency, with a frequency difference in the GHz range.

Mots clés: vertical cavity surface emitting lasers; semiconductor lasers; metrology

Domaines: Optique [physics.optics]; Astrophysique [astro-ph]

Fabiola A. Camargo, Jessica Barrientos-Barria, Ghaya Baili, Loïc Morvan, Daniel Dolfi, et al.. Coherent dual-frequency emission of a vertical external-cavity semiconductor laser at the cesium D2 line. IEEE Photonics Technology Letters, 2012, 24 (14), pp.1218 - 1220. ⟨10.1109/LPT.2012.2199103⟩. ⟨hal-00713194⟩