Seeding of a Titanium Sapphire oscillator by a Vertical-Cavity Surface-Emitting-Laser in the nanosecond range - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 1994

Seeding of a Titanium Sapphire oscillator by a Vertical-Cavity Surface-Emitting-Laser in the nanosecond range

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Abstract

A GaAs/AlGaAs vertical-cavity surface-emitting laser was used to seed a titanium-sapphire laser oscillator. Both lasers were pumped synchronously by the same frequency-doubled Nd:YAG laser in the nanosecond range. Even at low injection level, we obtained a strong narrowing of the emission spectrum of the oscillator (from 30 to 1 mn), as well as its tunability over a broad range of wavelengths (from 775 to 805 run)
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Dates and versions

hal-00701662 , version 1 (25-05-2012)

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Cite

Yann Boucher, Patrick Georges, Alain Brun, Jean-Paul Pocholle, Michel Papuchon. Seeding of a Titanium Sapphire oscillator by a Vertical-Cavity Surface-Emitting-Laser in the nanosecond range. Applied Physics Letters, 1994, 65 (7), pp.804-806. ⟨10.1063/1.112237⟩. ⟨hal-00701662⟩
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