Seeding of a Titanium Sapphire oscillator by a Vertical-Cavity Surface-Emitting-Laser in the nanosecond range

Yann Boucher (1) , Patrick Georges (1) , Alain Brun (1) , Jean-Paul Pocholle (2) , Michel Papuchon (2)

1 Laboratoire Charles Fabry de l'Institut d'Optique / Elsa
2 TRT - Thales Research and Technologies [Orsay]

A GaAs/AlGaAs vertical-cavity surface-emitting laser was used to seed a titanium-sapphire laser oscillator. Both lasers were pumped synchronously by the same frequency-doubled Nd:YAG laser in the nanosecond range. Even at low injection level, we obtained a strong narrowing of the emission spectrum of the oscillator (from 30 to 1 mn), as well as its tunability over a broad range of wavelengths (from 775 to 805 run)

Domains: Physics [physics]; Physics [physics]; Optics [physics.optics]

Yann Boucher, Patrick Georges, Alain Brun, Jean-Paul Pocholle, Michel Papuchon. Seeding of a Titanium Sapphire oscillator by a Vertical-Cavity Surface-Emitting-Laser in the nanosecond range. Applied Physics Letters, 1994, 65 (7), pp.804-806. ⟨10.1063/1.112237⟩. ⟨hal-00701662⟩