Femtosecond laser excitation of the semiconductor-metal phase transition in VO2

Michael F. Becker (1) , A. Bruce Buckman (1) , Rodger M. Walser (1) , Thierry Lépine (2) , Patrick Georges (2) , Alain Brun (2)

1 ECE - Department of Electrical and Computer Engineering - University of Texas
2 Laboratoire Charles Fabry de l'Institut d'Optique / Elsa

We have measured the subpicosecond optical response of a solid-state, semiconductor-to-metal phase transition excited by femtosecond laser pulses. We have determined the dynamic response of the complex refractive index of VOa thin films by making pump-probe optical transmission and reflection measurements at 780 nm. The phase transition was found to be largely prompt with the optical properties of the high-temperature metallic state being attained within 5 ps. The ultrafast change in complex refractive index enables ultrafast optical switching devices in VO²

Domains: Optics [physics.optics]

Michael F. Becker, A. Bruce Buckman, Rodger M. Walser, Thierry Lépine, Patrick Georges, et al.. Femtosecond laser excitation of the semiconductor-metal phase transition in VO2. Applied Physics Letters, 1994, 65 (12), pp.1507-1509. ⟨10.1063/1.112974⟩. ⟨hal-00701658⟩