Diode-pumped self-frequency doubling Nd:GdCa4O(BO3)3 lasers : towards green microchip lasers - Archive ouverte HAL Access content directly
Journal Articles Journal of the Optical Society of America B Year : 2000

Diode-pumped self-frequency doubling Nd:GdCa4O(BO3)3 lasers : towards green microchip lasers

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Abstract

An output power of 115 mW at 545 nm has been obtained from a diode-pumped self-frequency doubling Nd:GdCa4O(BO3)3 laser in a stable cavity. The infrared emission of the laser was found to be 1091 nm, not the 1060 nm that was expected when the highest line of the fluorescence spectrum was considered. We have demonstrated that the emission at 1091 nm was caused by the temperature increase at the focus of the pump beam. We demonstrated also, for what we believe was the first time, lasing operation of Nd:GdCOB in a plano-plano cavity and obtained an output power of 22 mW at 545 nm. To our knowledge, this is the highest output power ever reported with a self-frequency-doubling crystal in a plano-plano cavity
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Dates and versions

hal-00701633 , version 1 (25-05-2012)

Identifiers

  • HAL Id : hal-00701633 , version 1

Cite

Gaëlle Lucas-Leclin, Frédérica Augé, Sophie Charlotte Auzanneau, François Balembois, Patrick Georges, et al.. Diode-pumped self-frequency doubling Nd:GdCa4O(BO3)3 lasers : towards green microchip lasers. Journal of the Optical Society of America B, 2000, 17 (9), pp.1526-1530. ⟨hal-00701633⟩
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