Efficient laser operation of an Yb:S-FAP crystal at 985 nm - Institut d'Optique Graduate School Access content directly
Journal Articles Applied optics Year : 2003

Efficient laser operation of an Yb:S-FAP crystal at 985 nm

Abstract

We have obtained three-level cw laser operation at 985 nm with a Yb-doped S-FAP bulk crystal pumped by a Ti:sapphire laser. An output power of 250 mW for an incident pump power of 1.45 W has been achieved, which is the highest cw output power ever obtained, to our knowledge, at this wavelength with a Yb-doped crystal. The experimental results are in good agreement with the numerical model that we have developed
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Dates and versions

hal-00701618 , version 1 (25-05-2012)

Identifiers

  • HAL Id : hal-00701618 , version 1

Cite

Sylvie Yiou, François Balembois, Kathleen Schaffers, Patrick Georges. Efficient laser operation of an Yb:S-FAP crystal at 985 nm. Applied optics, 2003, 42 (24), pp.4883-4886. ⟨hal-00701618⟩
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