Photorefractive wave mixing in undoped LEC GaAs at 1.5µm : validation of photorefractive modeling
Abstract
We present photorefractive measurements in undoped GaAs performed at 1.06 pm, 1.32 ,um, and at 1.55 ,um. Using concentrations of EL2 0/+ that we determined through optical absorption and electron paramagnetic resonance measurements in the same sample, we show that a single defect model with an electron-hole competition quantitatively explains our results of photorefractive wave mixing.
Domains
Optics [physics.optics]Origin | Publisher files allowed on an open archive |
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