Abstract : We present studies of the photorefractive effect in nonphotorefractive orientations of liquid-encapsulated Czochralski-grown GaAs crystals. Picosecond diffraction experiments conducted in different samples show that a forbidden photorefractive signal correlates well with dislocation density, which points out that the effect arises from strain fields and growth defects.
https://hal-iogs.archives-ouvertes.fr/hal-00673561 Contributor : Marie-Laure EdwardsConnect in order to contact the contributor Submitted on : Friday, February 24, 2012 - 11:23:22 AM Last modification on : Tuesday, October 6, 2020 - 4:26:40 PM Long-term archiving on: : Friday, May 25, 2012 - 2:20:28 AM
K. Jarasiunas, J. Vaitkus, Philippe Delaye, Gérald Roosen. Dislocation density dependent photorefractive effect in (001)-cut GaAs. Optics Letters, Optical Society of America - OSA Publishing, 1994, 19 (23), pp.1946-1948. ⟨hal-00673561⟩