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Dislocation density dependent photorefractive effect in (001)-cut GaAs

Abstract : We present studies of the photorefractive effect in nonphotorefractive orientations of liquid-encapsulated Czochralski-grown GaAs crystals. Picosecond diffraction experiments conducted in different samples show that a forbidden photorefractive signal correlates well with dislocation density, which points out that the effect arises from strain fields and growth defects.
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Submitted on : Friday, February 24, 2012 - 11:23:22 AM
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K. Jarasiunas, J. Vaitkus, Philippe Delaye, Gérald Roosen. Dislocation density dependent photorefractive effect in (001)-cut GaAs. Optics Letters, Optical Society of America - OSA Publishing, 1994, 19 (23), pp.1946-1948. ⟨hal-00673561⟩

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