Dislocation density dependent photorefractive effect in (001)-cut GaAs

K. Jarasiunas (1) , J. Vaitkus (1) , Philippe Delaye (2) , Gérald Roosen (2)

1 Material Science and Applied Research Institut (Vilnius)
2 Laboratoire Charles Fabry de l'Institut d'Optique / Manolia

We present studies of the photorefractive effect in nonphotorefractive orientations of liquid-encapsulated Czochralski-grown GaAs crystals. Picosecond diffraction experiments conducted in different samples show that a forbidden photorefractive signal correlates well with dislocation density, which points out that the effect arises from strain fields and growth defects.

Domains: Physics [physics]; Physics [physics]; Optics [physics.optics]

K. Jarasiunas, J. Vaitkus, Philippe Delaye, Gérald Roosen. Dislocation density dependent photorefractive effect in (001)-cut GaAs. Optics Letters, 1994, 19 (23), pp.1946-1948. ⟨hal-00673561⟩