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Yb:SFAP crystal, intracavity and indirectly diode-pumped at 914 nm for a cw emission à 985 nm

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https://hal-iogs.archives-ouvertes.fr/hal-00584503
Contributor : François Balembois <>
Submitted on : Friday, April 8, 2011 - 4:54:31 PM
Last modification on : Wednesday, September 16, 2020 - 5:43:28 PM

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  • HAL Id : hal-00584503, version 1

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Marc Castaing, François Balembois, Patrick Georges, Thierry Georges, Kathleen Schaffers. Yb:SFAP crystal, intracavity and indirectly diode-pumped at 914 nm for a cw emission à 985 nm. Advanced Solid State Photonics 2008, Jan 2008, Nara, Japan. ⟨hal-00584503⟩

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