Yb:SFAP crystal, intracavity and indirectly diode-pumped at 914 nm for a cw emission à 985 nm - Archive ouverte HAL Access content directly
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Yb:SFAP crystal, intracavity and indirectly diode-pumped at 914 nm for a cw emission à 985 nm

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hal-00584503 , version 1 (08-04-2011)

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  • HAL Id : hal-00584503 , version 1

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Marc Castaing, François Balembois, Patrick Georges, Thierry Georges, Kathleen Schaffers. Yb:SFAP crystal, intracavity and indirectly diode-pumped at 914 nm for a cw emission à 985 nm. Advanced Solid State Photonics 2008, Jan 2008, Nara, Japan. ⟨hal-00584503⟩
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