Non-destructive X-ray study of the interphases in Mo/Si and Mo/B4C/Si/B4C multilayers - Institut d'Optique Graduate School Accéder directement au contenu
Article Dans Une Revue Thin Solid Films Année : 2006

Non-destructive X-ray study of the interphases in Mo/Si and Mo/B4C/Si/B4C multilayers

Résumé

We have tested and validated a non-destructive analysis method of multilayer structure, which combine X-ray emission spectroscopy and X-ray reflectometry at 0.154 and 1.33 nm. In this purpose, a series of Mo/Si and Mo/B4C/Si/B4C multilayers, deposited by magnetron sputtering, have been designed. The thickness of the Mo layer is 2 nm and that of the Si layers varies between 1 and 4 nm. The B4C layer thickness introduced at the Mo/Si and Si/Mo interfaces is 0.3 or 1 nm. It is shown that the reflectivity of the multilayers lowers with the decreasing silicon thickness. This is correlated to the diffuse character on the nanometer scale of the Mo/Si and Si/Mo interfaces as shown by secondary ion mass spectrometry, and the formation of silicides (MoSi2and Mo5Si3) at these interfaces as evidenced by X-ray emission spectroscopy. As expected, the introduction of B4C diffusion barriers considerably improves the reflectivity coefficient in the soft X-ray range, due to thinner and more abrupt interfaces.
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Dates et versions

hal-00575779 , version 1 (11-03-2011)

Identifiants

  • HAL Id : hal-00575779 , version 1

Citer

Hélène Maury, Philippe Jonnard, Jean-Michel André, Julien Gautier, Marc Roulliay, et al.. Non-destructive X-ray study of the interphases in Mo/Si and Mo/B4C/Si/B4C multilayers. Thin Solid Films, 2006, 514 (1-2), pp.278-286. ⟨hal-00575779⟩
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