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Non-destructive X-ray study of the interphases in Mo/Si and Mo/B4C/Si/B4C multilayers

Abstract : We have tested and validated a non-destructive analysis method of multilayer structure, which combine X-ray emission spectroscopy and X-ray reflectometry at 0.154 and 1.33 nm. In this purpose, a series of Mo/Si and Mo/B4C/Si/B4C multilayers, deposited by magnetron sputtering, have been designed. The thickness of the Mo layer is 2 nm and that of the Si layers varies between 1 and 4 nm. The B4C layer thickness introduced at the Mo/Si and Si/Mo interfaces is 0.3 or 1 nm. It is shown that the reflectivity of the multilayers lowers with the decreasing silicon thickness. This is correlated to the diffuse character on the nanometer scale of the Mo/Si and Si/Mo interfaces as shown by secondary ion mass spectrometry, and the formation of silicides (MoSi2and Mo5Si3) at these interfaces as evidenced by X-ray emission spectroscopy. As expected, the introduction of B4C diffusion barriers considerably improves the reflectivity coefficient in the soft X-ray range, due to thinner and more abrupt interfaces.
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https://hal-iogs.archives-ouvertes.fr/hal-00575779
Contributor : Sébastien de Rossi <>
Submitted on : Friday, March 11, 2011 - 10:17:21 AM
Last modification on : Wednesday, October 14, 2020 - 4:07:48 AM

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  • HAL Id : hal-00575779, version 1

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Hélène Maury, Philippe Jonnard, Jean-Michel André, Julien Gautier, Marc Roulliay, et al.. Non-destructive X-ray study of the interphases in Mo/Si and Mo/B4C/Si/B4C multilayers. Thin Solid Films, Elsevier, 2006, 514 (1-2), pp.278-286. ⟨hal-00575779⟩

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