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Conference Papers Year : 2008

Enhanced absorption in nanostructured silicon


Some applications such as ultrafast detectors or high efficiency photovoltaics require absorption by thin films. However, close to the bandgap, silicon absorbs very poorly. In this letter, we show that the absorption of a 100 nm slab can be as high as 50% in the range of wavelengths 700–830 nm when using a periodic structure properly designed.
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Dates and versions

hal-00574791 , version 1 (09-03-2011)



  • HAL Id : hal-00574791 , version 1


Marine Laroche, S. Bandiera, D. Jacob, T. Muller, François Marquier, et al.. Enhanced absorption in nanostructured silicon. EOS Topical Meeting on Nanophotonics, Photonic Crystals and Metamaterials, Sep 2008, Paris, France. ⟨hal-00574791⟩
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