Bloch mode analysis of subwavelength polarizing planar optics

Raphaël Mulin (1) , François Deneuville (2, 3) , Olivier Jeannin (1) , Matthieu Boffety (4) , Jerome Vaillant (2, 3)

1 ST-GRENOBLE - STMicroelectronics [Grenoble]
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 UGA - Université Grenoble Alpes
4 Laboratoire Charles Fabry / Imagerie et Information

The purpose of this paper is to investigate the impact of advanced immersion lithography process for the development of polarization optics at pixel level on CMOS image sensors. In the first part of this paper, we use Bloch formalism to define regimes that depend on the number of propagative Bloch modes within the structure. The presented analysis gives estimations of required features size to operate in NIR and visible range. The second part of this paper present optical characterization of silicon lamellar grating made on 300 mm wafer using advanced immersion lithography. Characterization results are discussed with respect to optical simulations and reconstructed grating profile is compared to patterning features estimated during first part.

Domaines: Optique [physics.optics]; Instrumentations et Détecteurs [physics.ins-det]

Raphaël Mulin, François Deneuville, Olivier Jeannin, Matthieu Boffety, Jerome Vaillant. Bloch mode analysis of subwavelength polarizing planar optics. SPIE Photonics West, High Contrast Metastructures XII, 12432, pp.1243204, 2023, High Contrast Metastructures XII, ⟨10.1117/12.2646194⟩. ⟨hal-04134147⟩