Resistivity annealing properties of aluminium thin films after ion implantation at liquid helium temperatures

A.M. Lamoise (1) , J. Chaumont (1) , Frédéric Meunier (2) , H. Bernas (3)

1 CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
2 LPS - Laboratoire de Physique des Solides
3 IPNO - Institut de Physique Nucléaire d'Orsay

We present the first resistivity annealing curves of Al after implantation of Al-, H-, and O-ions at liquid helium temperatures. The Al-implantation produces a curve resembling that of neutron-irradiated Al ; low-dose H- implantation results in two strongly enhanced stage I recovery peaks, while high-dose H- implantation annealing results suggest that H-ordering or a phase transformation takes place.

Keywords: aluminium; annealing; electrical conductivity of solid metals and alloys; hydrogen ions; ion beam effects; ion implantation; metallic thin films; oxygen; recovery; resistivity annealing curves; stage I recovery peaks; Al thin film; Al ion implantation; ordering; H ion implantation; O ion implantation; liquid He temperatures; phase transformations

Domains: Physics archives; Instrumentation and Detectors [physics.ins-det]

A.M. Lamoise, J. Chaumont, Frédéric Meunier, H. Bernas. Resistivity annealing properties of aluminium thin films after ion implantation at liquid helium temperatures. Journal de Physique Lettres, 1975, 36 (12), pp.305-308. ⟨10.1051/jphyslet:019750036012030500⟩. ⟨jpa-00231215⟩