Resistivity annealing properties of aluminium thin films after ion implantation at liquid helium temperatures - Archive du Journal de Physique Access content directly
Journal Articles Journal de Physique Lettres Year : 1975

Resistivity annealing properties of aluminium thin films after ion implantation at liquid helium temperatures

Abstract

We present the first resistivity annealing curves of Al after implantation of Al-, H-, and O-ions at liquid helium temperatures. The Al-implantation produces a curve resembling that of neutron-irradiated Al ; low-dose H- implantation results in two strongly enhanced stage I recovery peaks, while high-dose H- implantation annealing results suggest that H-ordering or a phase transformation takes place.
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Dates and versions

jpa-00231215 , version 1 (04-02-2008)

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A.M. Lamoise, J. Chaumont, Frédéric Meunier, H. Bernas. Resistivity annealing properties of aluminium thin films after ion implantation at liquid helium temperatures. Journal de Physique Lettres, 1975, 36 (12), pp.305-308. ⟨10.1051/jphyslet:019750036012030500⟩. ⟨jpa-00231215⟩
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