Progress in OCT-based Through Silicon Via (TSV) metrology

Abstract : We report on progress in Time-Domain OCT (optical coherence tomography) applied to TSV (vertical interconnect accesses in silicon, enabling stacking of devices). Transitioning from the common scalar approach to an electromagnetic one, and combining it with a damped least squares approach, we enhance the accuracy of TSV height measurements.
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Submitted on : Saturday, November 2, 2019 - 2:43:49 PM
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W. A. Iff, Christophe Sauvan, J-P. Hugonin, M. Besbes, P. Chavel, et al.. Progress in OCT-based Through Silicon Via (TSV) metrology. Frontiers in Optics, 2019, Washington, United States. pp.JW4A.115, ⟨10.1364/FIO.2019.JW4A.115⟩. ⟨hal-02343398⟩

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