D. G. Park, Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III???V semiconductor-based metal???insulator???semiconductor devices, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.14, issue.4, p.2674, 1996.
DOI : 10.1116/1.589003

I. Garcia, G. Martil, E. Gonzalez-diaz, S. Castan, M. Duenas et al., Deposition of SiNx:H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures, Journal of Applied Physics, vol.83, issue.1, p.332, 1998.
DOI : 10.1063/1.366713

M. C. Sitbon, B. Hugon, F. Agius, J. L. Abel, M. Courant et al., Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma???enhanced chemical vapor deposition, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.13, issue.6, p.2900, 1995.
DOI : 10.1116/1.579609

S. Shintani, H. Sugaki, and . Nakashima, Temperature dependence of stresses in chemical vapor deposited vitreous films, Journal of Applied Physics, vol.51, issue.8, p.4197, 1980.
DOI : 10.1063/1.328277

H. Takahashi, H. Nagata, H. Kataoka, and . Takai, Mechanisms of intrinsic stresses generation in sputtered amorphous Si: H films, Journal of Materials Research, vol.19, issue.11, p.2736, 1995.
DOI : 10.1103/PhysRevB.32.874

J. E. Klemberg-sapieha, Plasma deposition of low???stress electret films for electroacoustic and solar cell applications, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.14, issue.5, p.2775, 1996.
DOI : 10.1116/1.580199

J. H. Kim and K. W. Chung, Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering, Journal of Applied Physics, vol.83, issue.11, p.5831, 1998.
DOI : 10.1063/1.367440

J. and A. Taylor, The mechanical properties and microstructure of plasma enhanced chemical vapor deposited silicon nitride thin films, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.9, issue.4, p.2464, 1991.
DOI : 10.1116/1.577257

J. G. Gardeniers, H. A. Tilmans, and C. C. Visser, LPCVD silicon???rich silicon nitride films for applications in micromechanics, studied with statistical experimental design*, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.14, issue.5, p.2879, 1996.
DOI : 10.1116/1.580239

L. Shi, Plasma???enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.14, issue.2, p.471, 1996.
DOI : 10.1116/1.580108

P. Temple-boyer, C. Rossi, E. Saint-etienne, and E. Scheid, Residual stress in low pressure chemical vapor deposition SiNx films deposited from silane and ammonia, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.4, p.2003, 1998.
DOI : 10.1116/1.581302

J. Ahn and K. Suzuki, Stress???controlled silicon nitride film with high optical transmittance prepared by an ultrahigh???vacuum electron cyclotron resonance plasma chemical???vapor deposition system, Applied Physics Letters, vol.64, issue.24, p.3249, 1994.
DOI : 10.1063/1.111300

M. Maeda and K. Ikeda, Stress evaluation of radio-frequency-biased plasma-enhanced chemical vapor deposited silicon nitride films, Journal of Applied Physics, vol.83, issue.7, p.3865, 1998.
DOI : 10.1063/1.366618

F. Delmotte, M. C. Hugon, B. Agius, and J. L. Courant, Low temperature deposition of SiN[sub x]:H using SiH[sub 4]???N[sub 2] or SiH[sub 4]???NH[sub 3] distributed electron cyclotron resonance microwave plasma, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.15, issue.6, p.1919, 1997.
DOI : 10.1116/1.589579

W. J. Dauksher, Uniform low stress oxynitride films for application as hardmasks on x-ray masks, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.15, issue.6, p.2232, 1997.
DOI : 10.1116/1.589620

M. Stadtmüeller, Mechanical Stress of CVD-Dielectrics, Journal of The Electrochemical Society, vol.139, issue.12, p.3669, 1992.
DOI : 10.1149/1.2069141

S. Habermehl, Stress relaxation in Si-rich silicon nitride thin films, Journal of Applied Physics, vol.83, issue.9, p.4672, 1998.
DOI : 10.1063/1.367253

C. Cammarata, Surface and interface stress effects on the growth of thin films, Journal of Electronic Materials, vol.129, issue.9, p.966, 1997.
DOI : 10.1007/s11664-997-0232-3

U. Geyer, P. Von-hülsen, and . Thiyagarajan, Surface roughening and columnar growth of thin amorphous CuTi films, Applied Physics Letters, vol.70, issue.13, p.1691, 1997.
DOI : 10.1063/1.118671

J. Vink, M. A. Somers, J. L. Daams, and A. G. Dirks, Stress, strain, and microstructure of sputter???deposited Mo thin films, Journal of Applied Physics, vol.70, issue.8, p.4301, 1991.
DOI : 10.1063/1.349108

J. G. Yu, J. O. Kim, D. H. Chung, and . Cho, An elastic/plastic analysis of the intrinsic stresses in chemical vapor deposited diamond films on silicon substrates, Journal of Applied Physics, vol.88, issue.3, p.1688, 2000.
DOI : 10.1063/1.373873

W. Sheldon, K. H. Lau, and A. Rajamani, Intrinsic stress, island coalescence, and surface roughness during the growth of polycrystalline films, Journal of Applied Physics, vol.90, issue.10, p.5097, 2001.
DOI : 10.1063/1.1412577

H. Jeong, D. Kwon, and Y. J. Baik, Analytical model for intrinsic residual stress effects and out-of-plane deflections in free-standing thick films, Journal of Applied Physics, vol.91, issue.10, p.6333, 2002.
DOI : 10.1063/1.1470257

K. Landheer, D. Rajseh, J. E. Masson, G. I. Hulse, T. Sproule et al., Factors affecting interface-state density and stress of silicon nitride films deposited on Si by electron-cyclotron resonance chemical vapor deposition, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.5, p.2931, 1998.
DOI : 10.1116/1.581442

M. P. Lapeyrade, C. Besland, A. Meva-'a, G. Sibaï, and . Hollinger, Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.17, issue.2, p.433, 1999.
DOI : 10.1116/1.582106

F. Lambrinos, M. P. Besland, A. Gagnaire, P. Louis, S. Callard et al., In Situ Photoluminescence Control during Fabrication of SiO[sub 2]/InP Structures, Journal of The Electrochemical Society, vol.144, issue.6, p.2086, 1997.
DOI : 10.1149/1.1837746

T. E. Retajczyk and A. K. Sinha, Elastic stiffness and thermal expansion coefficients of various refractory silicides and silicon nitride films, Thin Solid Films, vol.70, issue.2, p.241, 1980.
DOI : 10.1016/0040-6090(80)90364-8

G. Moulard, G. Contoux, G. Motyl, G. Gardet, and M. Courbon, Improvement of the cantilever beam technique for stress measurement during the physical vapor deposition process, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.2, p.736, 1998.
DOI : 10.1116/1.581053

I. Sugimoto and S. Nakano, Helium???excited reactive magnetron sputtering for stress???free silicon nitride films, Applied Physics Letters, vol.62, issue.17, p.2116, 1993.
DOI : 10.1063/1.109444

R. C. Cammarata, T. M. Trimble, and D. J. Srolovitz, Surface stress model for intrinsic stresses in thin films, Journal of Materials Research, vol.308, issue.11, p.2468, 2000.
DOI : 10.1016/0040-6090(72)90396-3

M. Copel, P. R. Varekamp, D. W. Kisker, F. R. Mcfeely, K. E. Litz et al., Nucleation of chemical vapor deposited silicon nitride on silicon dioxide, Applied Physics Letters, vol.74, issue.13, p.1830, 1999.
DOI : 10.1063/1.123100

J. A. Theil, S. V. Hattangady, and G. Lucovsky, thin???film growth by remote plasma???enhanced chemical???vapor deposition, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.10, issue.4, p.719, 1992.
DOI : 10.1116/1.577716

H. Leplan, B. Geenen, J. Y. Robic, and Y. Pauleau, Residual stresses in evaporated silicon dioxide thin films: Correlation with deposition parameters and aging behavior, Journal of Applied Physics, vol.78, issue.2, p.962, 1995.
DOI : 10.1063/1.360290

Y. Park, Evolution of residual stress in plasma-enhanced chemical-vapor-deposited silicon dioxide film exposed to room air, Applied Physics Letters, vol.75, issue.24, p.3811, 1999.
DOI : 10.1063/1.125464

J. A. Thornton, J. Tabock, and D. W. Hoffman, Internal stresses in metallic films deposited by cylindrical magnetron sputtering, Thin Solid Films, vol.64, issue.1, p.111, 1979.
DOI : 10.1016/0040-6090(79)90550-9

L. B. Freund and E. Chason, Model for stress generated upon contact of neighboring islands on the surface of a substrate, Journal of Applied Physics, vol.89, issue.9, p.4866, 2001.
DOI : 10.1063/1.1359437

S. G. Mayr and K. Samwer, Model for Intrinsic Stress Formation in Amorphous Thin Films, Physical Review Letters, vol.87, issue.3, p.36105, 2001.
DOI : 10.1103/PhysRevLett.87.036105

J. Yota, J. Hander, and A. A. Saleh, A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.18, issue.2, p.372, 2000.
DOI : 10.1116/1.582195

S. Jourba, M. Besland, M. Gendry, M. Garrigues, J. Leclercq et al., 2 [micro sign]m resonant cavity enhanced InP/InGaAs single quantum well photo-detector, Electronics Letters, vol.35, issue.15, p.1272, 1999.
DOI : 10.1049/el:19990620