A. W. Srinivasan, D. Fang, J. Liang, B. Peters, J. E. Kaye et al., Design of phase-shifted hybrid silicon distributed feedback lasers, Optics Express, vol.19, issue.10, p.9255, 2011.
DOI : 10.1364/OE.19.009255

S. Stankovic´, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens et al., 1310-nm Hybrid III–V/Si Fabry–Pérot Laser Based on Adhesive Bonding, IEEE Photonics Technology Letters, vol.23, issue.23, p.1781, 2011.
DOI : 10.1109/LPT.2011.2169397

P. R. Van-campenhout, P. Romeo, C. Regreny, D. Seassal, S. Van-thourhout et al., Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit, Optics Express, vol.15, issue.11, p.6744, 2007.
DOI : 10.1364/OE.15.006744

S. Lamponi, C. Keyvaninia, F. Jany, F. Poingt, G. Lelarge et al., Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler, IEEE Photonics Technology Letters, vol.24, issue.1, p.76, 2012.
DOI : 10.1109/LPT.2011.2172791

R. Hawkins, T. E. Reynolds, D. R. England, D. I. Babic, M. J. Mondry et al., Silicon heterointerface photodetector, Applied Physics Letters, vol.68, issue.26, p.3692, 1996.
DOI : 10.1063/1.115975

K. Tanabe, Y. Watanabe, and . Arakawa, 13 ??m InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces, Optics Express, vol.20, issue.26, p.315, 2012.
DOI : 10.1364/OE.20.00B315

E. Matioli, M. Rangel, B. Iza, N. Fleury, J. Pfaff et al., High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals, Applied Physics Letters, vol.96, issue.3, p.31108, 2010.
DOI : 10.1063/1.3293442

P. Karim, D. Abraham, Y. Lofgreen, J. Chiu, J. Piprek et al., Wafer bonded 1.55 ??m vertical-cavity lasers with continuous-wave operation up to 105?????C, Applied Physics Letters, vol.78, issue.18, p.2632, 2001.
DOI : 10.1063/1.1368377

F. Patriarche, J. Jeannès, F. Oudar, and . Glas, Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices, Journal of Applied Physics, vol.82, issue.10, p.4892, 1997.
DOI : 10.1063/1.366353

W. Trucks, K. Raghavachari, G. S. Higashi, and Y. J. , Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation, Physical Review Letters, vol.65, issue.4, p.504, 1990.
DOI : 10.1103/PhysRevLett.65.504

H. Pang and . Benisty, Nanostructured silicon geometries for directly bonded hybrid III???V-silicon active devices, Photonics and Nanostructures - Fundamentals and Applications, vol.11, issue.2, p.145, 2013.
DOI : 10.1016/j.photonics.2012.12.003
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