Infuence of a depletion layer on localized surface waves in doped semiconductor nanostructures - Institut d'Optique Graduate School Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2012

Infuence of a depletion layer on localized surface waves in doped semiconductor nanostructures

Résumé

We report THz polarized reflectivity measurements on a doped GaAs grating made of thin walls with subwavelength dimensions and periodicity. A clear dip appears in the TM-polarized reflectivity spectrum, due to the excitation of a localized surface plasmon-phonon mode along the grating walls. The theoretical model used to describe the electromagnetic response of the grating shows the importance of the depletion layer at the GaAs surface and indicates a high sensitivity of the reflectivity dip frequency to the surface potential.
Fichier principal
Vignette du fichier
APL.Simon.12.pdf (809.32 Ko) Télécharger le fichier
Origine : Accord explicite pour ce dépôt
Loading...

Dates et versions

hal-00785285 , version 1 (05-02-2013)

Identifiants

Citer

Simon Vassant, Fabrice Pardo, Patrick Bouchon, Riad Haïdar, François Marquier, et al.. Infuence of a depletion layer on localized surface waves in doped semiconductor nanostructures. Applied Physics Letters, 2012, 100, pp.091103. ⟨10.1063/1.3689747⟩. ⟨hal-00785285⟩
174 Consultations
214 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More