1. R. Jain and M. B. Klein, Degenerate Four-Wave Mixing in Semiconductors, pp.307-415, 1983.
DOI : 10.1016/B978-0-12-257740-6.50016-0
URL : https://hal.archives-ouvertes.fr/jpa-00222592

A. Miller, D. A. Miller, and S. D. Smith, Dynamic non-linear optical processes in semiconductors, Advances in Physics, vol.4, issue.2, pp.697-800, 1981.
DOI : 10.1016/0030-4018(79)90276-1

H. J. Eichler, P. Gunter, and D. W. , Laser Induced Dynamic Gratings, Opt. Sci, vol.50, 1986.
DOI : 10.1007/978-3-540-39662-8

J. Vaitkus, E. Gaubas, K. Jarasiunas, and M. Petrauskas, Mapping of GaAs and Si wafers and ion-implanted layers by light-induced scattering and absorption of IR light, Semiconductor Science and Technology, vol.7, issue.1A, pp.131-134, 1992.
DOI : 10.1088/0268-1242/7/1A/024

G. Pauliat and G. Roosen, Photorefractive effect generated in sillenite crystals by picosecond pulses and comparison with the quasi-continuous regime, Journal of the Optical Society of America B, vol.7, issue.12, p.2259, 1990.
DOI : 10.1364/JOSAB.7.002259
URL : https://hal.archives-ouvertes.fr/hal-00856195

W. A. Schroeder, T. S. Stark, M. D. Dawson, T. F. Boggess, A. L. Smirl et al., Picosecond separation and measurement of coexisting photorefractive, bound-electronic, and free-carrier grating dynamics in GaAs, Optics Letters, vol.16, issue.3, pp.159-161, 1991.
DOI : 10.1364/OL.16.000159

G. M. Martin, Optical assessment of the main electron trap in bulk semi???insulating GaAs, Applied Physics Letters, vol.39, issue.9, pp.747-748, 1981.
DOI : 10.1063/1.92852

K. Jarasiunas, J. Vaitkus, P. Stat, H. J. Soljarasiunas, K. Gerritsen et al., EC studies in SI LEC-grown GaAs by using nanosecond pulses of YAG-laser have shown that the decrease of transmittivity with excitation was correlating with the essential increase of the slope ? ; see, Appl.Phys. Lett. Annales Universitatis Mariae Curie-Sklodowska Opt. Commun, vol.4444, issue.88, pp.793190-193, 1977.

G. C. Valley, J. Dubard, and A. L. Smirl, Theory of high gain transient energy transfer in GaAs and Si, IEEE Journal of Quantum Electronics, vol.26, issue.6, p.1058, 1990.
DOI : 10.1109/3.108101

E. Garmire, D. F. Lovelace, and G. B. Thompson, Zinc-diffused two-dimensional optical waveguides in n-type GaAs, Applied Optics, vol.15, issue.6, pp.1394-97, 1976.
DOI : 10.1364/AO.15.001394

G. C. Valley, T. F. Boggess, J. Dubard, and A. L. Smirl, Picosecond pump???probe technique to measure deep???level, free???carrier, and two photon cross sections in GaAs, Journal of Applied Physics, vol.66, issue.6, pp.2407-2413, 1989.
DOI : 10.1063/1.344248

M. Pugnet, J. Collet, B. Saint, and . Cricq, Induced Picosecond Infrared Absorption in GaAs, Europhysics Letters (EPL), vol.7, issue.6, p.567, 1988.
DOI : 10.1209/0295-5075/7/6/015

J. Dabrowski and M. Scheffler, 2, Physical Review B, vol.40, issue.15, pp.10391-401, 1989.
DOI : 10.1103/PhysRevB.40.10391
URL : https://hal.archives-ouvertes.fr/hal-00415422

J. Farvacque and B. Podor, Dislocation Bound States in Compound Semiconductors, physica status solidi (b), vol.2, issue.2, p.687, 1991.
DOI : 10.1002/pssb.2221670230