M. B. Trivedi and . Klein, of the most important photorefractive materials for the wavelength range between 1 and 1.55µm : GaAs and CdTe. Both of these crystals present an electron-hole competition that can lead to an annulation of the gain at 1.32µm or 1.55µm, depending on the sample. If CdTe presents the highest gain due to its higher electrooptic coefficient, only GaAs presents net gain at 1.55µm due to its smaller absorption. The sensitivity of these two crystals are similar with a strong variation from sample to sample for CdTe. References : [1]

. Appl, . Phys, Y. Lett, . Belaud, . Ph et al., Optics Comm, C. Jonathan, G.Roosen. Optics Comm, pp.961-312, 1979.

P. Silverberg, P. Omling, and L. Samuelson, Hole photoionization cross sections of EL2 in GaAs, Applied Physics Letters, vol.52, issue.20, p.1689, 1989.
DOI : 10.1063/1.99020

F. X. Zach and A. Winnacker, Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-Wafers, Japanese Journal of Applied Physics, vol.28, issue.Part 1, No. 6, p.957, 1989.
DOI : 10.1143/JJAP.28.957

D. T. Marple, Refractive Index of ZnSe, ZnTe, and CdTe, Journal of Applied Physics, vol.35, issue.3, p.539, 1964.
DOI : 10.1063/1.1713411

R. N. Schwartz, M. Ziari, and S. Trivedi, Electron paramagnetic resonance and an optical investigation of photorefractive vanadium-doped CdTe, Physical Review B, vol.49, issue.8, p.5274, 1994.
DOI : 10.1103/PhysRevB.49.5274