High-power diode-pumped cryogenically cooled Yb:CaF2 laser with extremely low quantum defect - Archive ouverte HAL Access content directly
Journal Articles Optics Letters Year : 2011

High-power diode-pumped cryogenically cooled Yb:CaF2 laser with extremely low quantum defect

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Abstract

High-power diode-pumped laser operation at 992-993nm under a pumping wavelength of 981 of 986nm is demonstrated with Yb:CaF2 operating at cryogenic temperature (77K), leading to extremely low quantum defects of 1.2% and 0.7%, respectively. An average output power of 33Whas been produced with an optical efficiency of 35%. This represents, to the best of our knowledge, the best laser performance ever obtained at such low quantum defects on intense laser lines.
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Dates and versions

hal-00588873 , version 1 (26-04-2011)

Identifiers

  • HAL Id : hal-00588873 , version 1

Cite

Sandrine Ricaud, Dimitris N. Papadopoulos, Alain Pellegrina, François Balembois, Patrick Georges, et al.. High-power diode-pumped cryogenically cooled Yb:CaF2 laser with extremely low quantum defect. Optics Letters, 2011, 36 (9), pp.1602-1605. ⟨hal-00588873⟩
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