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Defect-state occupation, Fermi-level pinning, and illumination effects on free semiconductor surfaces, Physical Review B, vol.43, issue.5, pp.4071-83, 1011. ,
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Band parameters for III???V compound semiconductors and their alloys, Journal of Applied Physics, vol.89, issue.11, pp.5815-5875, 1014. ,
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Simulation of DQW, 1016. ,
5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality, IEEE Photonics Technology Letters, vol.20, issue.19, pp.1648-1024, 1021. ,
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Gain spectra in GaAs double???heterostructure injection lasers, Journal of Applied Physics, vol.46, issue.3, pp.1299-1306, 1975. ,
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Technique for measurement of the gain spectra of semiconductor diode lasers, Journal of Applied Physics, vol.56, issue.11, pp.3096-3099, 1030. ,
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Characterization of semiconductor laser gain media by the segmented contact method, IEEE Journal of Selected Topics in Quantum Electronics, vol.9, issue.5, pp.1275-1282, 1033. ,
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Reliability and Degradation of Semiconductor Lasers and 1035 LEDs, p.1036, 1991. ,
Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers, Linewidth enhancement factor and optical gain in 1038 (GaIn)(NAs)/GaAs lasers, pp.1-3, 1037. ,
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Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3?????m dilute nitride double-quantum-well lasers, IET Optoelectronics, vol.1, issue.6, pp.284-288, 1041. ,
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Quantitative imaging of intracavity spontaneous emission 1049 distributions using tapered lasers fabricated with windowed n-contacts, p.1050 ,
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High-Power Diode Lasers: Fundamentals, Technology, Ap-885 plications, p.886, 2000. ,
DOI : 10.1007/3-540-47852-3
Spatio-temporal characteristics of filamentation in broad-area semiconductor lasers: experimental results, IEEE Photonics Technology Letters, vol.10, issue.1, pp.54-56, 0891. ,
DOI : 10.1109/68.651101
Spatio-spectral characteristics of a high power, high bright-893 ness CW InGaAs/AlGaAs unstable resonator semiconductor laser Elec-894 tron, Lett, vol.29, issue.18, pp.1597-1599, 1993. ,
High power, nearly diffraction-limited output from a semiconductor laser with an unstable resonator, IEEE Journal of Quantum Electronics, vol.27, issue.9, pp.2098-2108, 1991. ,
DOI : 10.1109/3.135167
W CW, diffraction-limited operation 901 of a monolithically integrated master oscillator power-amplifier, p.902 ,
High-power, strained-layer amplifiers and lasers with tapered gain regions, IEEE Photonics Technology Letters, vol.5, issue.6, pp.605-608 ,
DOI : 10.1109/68.219683
Simulation of static and dy- 977 namic properties of edge-emitting multiple-quantum-well lasers Nonlinear 982 properties of tapered laser cavities, IEEE 978 J. Sel. Topics Quantum Electron. IEEE J. Sel. Topics Quantum, vol.930, issue.9 3, pp.798-806, 0984. ,
Quasi-3-D simulation of high-brightness 987 tapered lasers, IEEE J. Quantum Electron, vol.986, issue.50 5, pp.463-472, 0989. ,
The impact of nonequilibrium gain in a spectral laser diode model, Optical and Quantum Electronics, vol.9, issue.12-14, pp.1019-1027, 2006. ,
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Design of wide-emitter 994 single-mode laser diodes, IEEE J. Quantum Electron, vol.41, issue.4, pp.995-506, 0996. ,
Multistep method for wide-angle beam propagation, pp.1743-1745, 1992. ,
Inclusion of 999 thermal boundary resistance in the simulation of high-power 980 nm ridge 1000 waveguide lasers, Opt. Quantum Electron, vol.406, issue.5, pp.373-377, 1001. ,
The impact of hot-phonons on the performance of dilute nitride edge-1004 emitting quantum well lasers, J. Phys. Conf. Ser, vol.92, issue.012068, pp.1005-1006, 1003. ,
The influence of surface effects 1007 on the simulation of 1.3, µm InGaAsN edge-emitting lasers, pp.11-14, 1009. ,
Defect-state occupation, Fermi-level pinning, and illumination effects on free semiconductor surfaces, Physical Review B, vol.43, issue.5, pp.4071-83, 1011. ,
DOI : 10.1103/PhysRevB.43.4071
Band parameters for III???V compound semiconductors and their alloys, Journal of Applied Physics, vol.89, issue.11, pp.5815-5875, 1014. ,
DOI : 10.1063/1.1368156
Simulation of DQW, 1016. ,
5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality, IEEE Photonics Technology Letters, vol.20, issue.19, pp.1648-1024, 1021. ,
DOI : 10.1109/LPT.2008.2002744
Gain spectra in GaAs double???heterostructure injection lasers, Journal of Applied Physics, vol.46, issue.3, pp.1299-1306, 1975. ,
DOI : 10.1063/1.321696
Technique for measurement of the gain spectra of semiconductor diode lasers, Journal of Applied Physics, vol.56, issue.11, pp.3096-3099, 1030. ,
DOI : 10.1063/1.333867
Characterization of semiconductor laser gain media by the segmented contact method, IEEE Journal of Selected Topics in Quantum Electronics, vol.9, issue.5, pp.1275-1282, 1033. ,
DOI : 10.1109/JSTQE.2003.819472
Reliability and Degradation of Semiconductor Lasers and 1035 LEDs, p.1036, 1991. ,
Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers, Linewidth enhancement factor and optical gain in 1038 (GaIn)(NAs)/GaAs lasers, pp.1-3, 1037. ,
DOI : 10.1063/1.1638628
Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3?????m dilute nitride double-quantum-well lasers, IET Optoelectronics, vol.1, issue.6, pp.284-288, 1041. ,
DOI : 10.1049/iet-opt:20070035
Quantitative imaging of intracavity spontaneous emission 1049 distributions using tapered lasers fabricated with windowed n-contacts, p.1050 ,
Unstable Optical Resonator Loss Calculations Using the Prony Method, Applied Optics, vol.9, issue.12, pp.2729-2736, 1055. ,
DOI : 10.1364/AO.9.002729
Par- 1064 illaud, and M. Lecomte, " 1W high brightness index guided tapered laser 1065 at 980 nm using Al-free active region materials Lateral mode selection in a 1068 broad area laser diode by self-injection locking with a mirror stripe, Electron. Lett, vol.73, issue.39 15, pp.1182-1184, 1066. ,
Self-organizing laser cavi- 1071 ties, Photorefractive Materials and Their Applications 3: Applications 1072, p.1073 ,
Numerical modeling of high-power self- 1076 organizing external cavity lasers, Opt. Quantum Electron, 1075. ,
Narrow-line coherently-combined 1084 tapered laser diodes in a Talbot external cavity with a volume Bragg grat- 1085 ing, Appl. Phys. Lett, vol.46, issue.93, pp.6297-6301, 1082. ,
He received the B.Eng. degree 1088 (with first-class honors) in electronic engineering and 1089, 1978. ,
where he is involved in the 1236 field of high-power and high-brightness diode lasers, 12371238. ,