R. Diehl and E. , High-Power Diode Lasers: Fundamentals, Technology, Ap-885 plications, p.886, 2000.
DOI : 10.1007/3-540-47852-3

J. R. Marciante and G. P. , Spatio-temporal characteristics of filamentation in broad-area semiconductor lasers: experimental results, IEEE Photonics Technology Letters, vol.10, issue.1, pp.54-56, 0891.
DOI : 10.1109/68.651101

Z. Bao, R. K. Defreez, P. D. Carleson, C. Largent, C. Moeller et al., Spatio-spectral characteristics of a high power, high bright-893 ness CW InGaAs/AlGaAs unstable resonator semiconductor laser Elec-894 tron, Lett, vol.29, issue.18, pp.1597-1599, 1993.

L. M. Tilton, G. C. Dente, A. H. Paxton, J. Cser, R. K. Defreez et al., High power, nearly diffraction-limited output from a semiconductor laser with an unstable resonator, IEEE Journal of Quantum Electronics, vol.27, issue.9, pp.2098-2108, 1991.
DOI : 10.1109/3.135167

R. Parke, D. F. Welch, A. Hardy, R. Lang, D. Mehuys et al., W CW, diffraction-limited operation 901 of a monolithically integrated master oscillator power-amplifier, p.902

E. S. Kintzer, J. N. Walpole, S. R. Chinn, C. A. Wang, and L. J. , High-power, strained-layer amplifiers and lasers with tapered gain regions, IEEE Photonics Technology Letters, vol.5, issue.6, pp.605-608
DOI : 10.1109/68.219683

J. J. Lim, S. Sujecki, and E. C. Larkins, The influence of surface effects 1007 on the simulation of 1.3, µm InGaAsN edge-emitting lasers, pp.11-14, 1009.

R. B. Darling, Defect-state occupation, Fermi-level pinning, and illumination effects on free semiconductor surfaces, Physical Review B, vol.43, issue.5, pp.4071-83, 1011.
DOI : 10.1103/PhysRevB.43.4071

I. Vurgaftman, J. R. Meyer, and L. R. Ram-mohan, Band parameters for III???V compound semiconductors and their alloys, Journal of Applied Physics, vol.89, issue.11, pp.5815-5875, 1014.
DOI : 10.1063/1.1368156

J. J. Lim, R. Mackenzie, S. Sujecki, E. C. Larkins, M. Sadeghi et al., Simulation of DQW, 1016.

K. Hasler, B. Sumpf, P. Adamiec, F. Bugge, J. Fricke et al., 5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality, IEEE Photonics Technology Letters, vol.20, issue.19, pp.1648-1024, 1021.
DOI : 10.1109/LPT.2008.2002744

B. W. Hakki and L. Paoli, Gain spectra in GaAs double???heterostructure injection lasers, Journal of Applied Physics, vol.46, issue.3, pp.1299-1306, 1975.
DOI : 10.1063/1.321696

D. T. Cassidy, Technique for measurement of the gain spectra of semiconductor diode lasers, Journal of Applied Physics, vol.56, issue.11, pp.3096-3099, 1030.
DOI : 10.1063/1.333867

P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson et al., Characterization of semiconductor laser gain media by the segmented contact method, IEEE Journal of Selected Topics in Quantum Electronics, vol.9, issue.5, pp.1275-1282, 1033.
DOI : 10.1109/JSTQE.2003.819472

M. Fukuda, Reliability and Degradation of Semiconductor Lasers and 1035 LEDs, p.1036, 1991.

N. C. Gerhardt, M. R. Hofmann, J. Hader, J. V. Moloney, S. W. Koch et al., Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers, Linewidth enhancement factor and optical gain in 1038 (GaIn)(NAs)/GaAs lasers, pp.1-3, 1037.
DOI : 10.1063/1.1638628

R. Mackenzie, J. J. Lim, S. Bull, S. Chao, S. Sujecki et al., Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3?????m dilute nitride double-quantum-well lasers, IET Optoelectronics, vol.1, issue.6, pp.284-288, 1041.
DOI : 10.1049/iet-opt:20070035

M. Auzanneau, M. Calligaro, O. Lecomte, M. Parillaud, 1. E. Krakowski et al., Quantitative imaging of intracavity spontaneous emission 1049 distributions using tapered lasers fabricated with windowed n-contacts, p.1050

A. E. Siegman and H. Y. Miller, Unstable Optical Resonator Loss Calculations Using the Prony Method, Applied Optics, vol.9, issue.12, pp.2729-2736, 10541970.
DOI : 10.1364/AO.9.002729

R. Diehl and E. , High-Power Diode Lasers: Fundamentals, Technology, Ap-885 plications, p.886, 2000.
DOI : 10.1007/3-540-47852-3

J. R. Marciante and G. P. , Spatio-temporal characteristics of filamentation in broad-area semiconductor lasers: experimental results, IEEE Photonics Technology Letters, vol.10, issue.1, pp.54-56, 0891.
DOI : 10.1109/68.651101

Z. Bao, R. K. Defreez, P. D. Carleson, C. Largent, C. Moeller et al., Spatio-spectral characteristics of a high power, high bright-893 ness CW InGaAs/AlGaAs unstable resonator semiconductor laser Elec-894 tron, Lett, vol.29, issue.18, pp.1597-1599, 1993.

L. M. Tilton, G. C. Dente, A. H. Paxton, J. Cser, R. K. Defreez et al., High power, nearly diffraction-limited output from a semiconductor laser with an unstable resonator, IEEE Journal of Quantum Electronics, vol.27, issue.9, pp.2098-2108, 1991.
DOI : 10.1109/3.135167

R. Parke, D. F. Welch, A. Hardy, R. Lang, D. Mehuys et al., W CW, diffraction-limited operation 901 of a monolithically integrated master oscillator power-amplifier, p.902

E. S. Kintzer, J. N. Walpole, S. R. Chinn, C. A. Wang, and L. J. , High-power, strained-layer amplifiers and lasers with tapered gain regions, IEEE Photonics Technology Letters, vol.5, issue.6, pp.605-608
DOI : 10.1109/68.219683

U. Bandelow, R. Hünlich, T. Koprucki, S. Sujecki, L. Borruel et al., Simulation of static and dy- 977 namic properties of edge-emitting multiple-quantum-well lasers Nonlinear 982 properties of tapered laser cavities, IEEE 978 J. Sel. Topics Quantum Electron. IEEE J. Sel. Topics Quantum, vol.930, issue.9 3, pp.798-806, 0984.

L. Borruel, S. Sujecki, P. Moreno, J. Wykes, M. Krakowski et al., Quasi-3-D simulation of high-brightness 987 tapered lasers, IEEE J. Quantum Electron, vol.986, issue.50 5, pp.463-472, 0989.

P. J. Bream, J. J. Lim, S. Bull, A. V. Andrianov, S. Sujecki et al., The impact of nonequilibrium gain in a spectral laser diode model, Optical and Quantum Electronics, vol.9, issue.12-14, pp.1019-1027, 2006.
DOI : 10.1007/s11082-006-9017-9

J. J. Lim, T. M. Benson, and E. C. Larkins, Design of wide-emitter 994 single-mode laser diodes, IEEE J. Quantum Electron, vol.41, issue.4, pp.995-506, 0996.

G. R. Hadley, Multistep method for wide-angle beam propagation, pp.1743-1745, 1992.

R. Mackenzie, J. J. Lim, S. Bull, S. Sujecki, and E. C. Larkins, Inclusion of 999 thermal boundary resistance in the simulation of high-power 980 nm ridge 1000 waveguide lasers, Opt. Quantum Electron, vol.406, issue.5, pp.373-377, 1001.

R. Mackenzie, J. J. Lim, S. Bull, S. Sujecki, A. J. Kent et al., The impact of hot-phonons on the performance of dilute nitride edge-1004 emitting quantum well lasers, J. Phys. Conf. Ser, vol.92, issue.012068, pp.1005-1006, 1003.

J. J. Lim, S. Sujecki, and E. C. Larkins, The influence of surface effects 1007 on the simulation of 1.3, µm InGaAsN edge-emitting lasers, pp.11-14, 1009.

R. B. Darling, Defect-state occupation, Fermi-level pinning, and illumination effects on free semiconductor surfaces, Physical Review B, vol.43, issue.5, pp.4071-83, 1011.
DOI : 10.1103/PhysRevB.43.4071

I. Vurgaftman, J. R. Meyer, and L. R. Ram-mohan, Band parameters for III???V compound semiconductors and their alloys, Journal of Applied Physics, vol.89, issue.11, pp.5815-5875, 1014.
DOI : 10.1063/1.1368156

J. J. Lim, R. Mackenzie, S. Sujecki, E. C. Larkins, M. Sadeghi et al., Simulation of DQW, 1016.

K. Hasler, B. Sumpf, P. Adamiec, F. Bugge, J. Fricke et al., 5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality, IEEE Photonics Technology Letters, vol.20, issue.19, pp.1648-1024, 1021.
DOI : 10.1109/LPT.2008.2002744

B. W. Hakki and L. Paoli, Gain spectra in GaAs double???heterostructure injection lasers, Journal of Applied Physics, vol.46, issue.3, pp.1299-1306, 1975.
DOI : 10.1063/1.321696

D. T. Cassidy, Technique for measurement of the gain spectra of semiconductor diode lasers, Journal of Applied Physics, vol.56, issue.11, pp.3096-3099, 1030.
DOI : 10.1063/1.333867

P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson et al., Characterization of semiconductor laser gain media by the segmented contact method, IEEE Journal of Selected Topics in Quantum Electronics, vol.9, issue.5, pp.1275-1282, 1033.
DOI : 10.1109/JSTQE.2003.819472

M. Fukuda, Reliability and Degradation of Semiconductor Lasers and 1035 LEDs, p.1036, 1991.

N. C. Gerhardt, M. R. Hofmann, J. Hader, J. V. Moloney, S. W. Koch et al., Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers, Linewidth enhancement factor and optical gain in 1038 (GaIn)(NAs)/GaAs lasers, pp.1-3, 1037.
DOI : 10.1063/1.1638628

R. Mackenzie, J. J. Lim, S. Bull, S. Chao, S. Sujecki et al., Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3?????m dilute nitride double-quantum-well lasers, IET Optoelectronics, vol.1, issue.6, pp.284-288, 1041.
DOI : 10.1049/iet-opt:20070035

M. Auzanneau, M. Calligaro, O. Lecomte, M. Parillaud, 1. E. Krakowski et al., Quantitative imaging of intracavity spontaneous emission 1049 distributions using tapered lasers fabricated with windowed n-contacts, p.1050

A. E. Siegman and H. Y. Miller, Unstable Optical Resonator Loss Calculations Using the Prony Method, Applied Optics, vol.9, issue.12, pp.2729-2736, 1055.
DOI : 10.1364/AO.9.002729

. Phys, M. Lett, S. C. Krakowski, F. Auzanneau, M. Berlie et al., Par- 1064 illaud, and M. Lecomte, " 1W high brightness index guided tapered laser 1065 at 980 nm using Al-free active region materials Lateral mode selection in a 1068 broad area laser diode by self-injection locking with a mirror stripe, Electron. Lett, vol.73, issue.39 15, pp.1182-1184, 1066.

G. Pauliat, N. Dubreuil, and G. Roosen, Self-organizing laser cavi- 1071 ties, Photorefractive Materials and Their Applications 3: Applications 1072, p.1073

Z. Zhang, G. Pauliat, J. J. Lim, P. J. Bream, N. Dubreuil et al., Numerical modeling of high-power self- 1076 organizing external cavity lasers, Opt. Quantum Electron, 1075.

]. D. Opt, G. Paboeuf, P. Lucas-leclin, N. Georges, M. Michel et al., Narrow-line coherently-combined 1084 tapered laser diodes in a Talbot external cavity with a volume Bragg grat- 1085 ing, Appl. Phys. Lett, vol.46, issue.93, pp.6297-6301, 1082.

. Malaysia, He received the B.Eng. degree 1088 (with first-class honors) in electronic engineering and 1089, 1978.

. Braun-institut-für-höchstfrequenztechnik, where he is involved in the 1236 field of high-power and high-brightness diode lasers, 12371238.