Power density and temperature effects on the photoluminescence spectra of InAlAs/GaAlAs quantum dots

Abstract : Photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurement techniques are used to characterize the size and the density of In 1-x Al x As/Ga 0.67 Al 0.33 As quantum dots (QDs) for different QD aluminium compositions. The integrated photoluminescence intensity (IPL) depends on an excitation light power, decreases with increasing the aluminium proportion emphasizing the QDs surface density decreasing. In TRPL experiments, the influence of QD lateral coupling is evidence in high QD density sample, the radiative lifetime increases with increasing temperatures for sample with a low aluminium proportion, instead, the observed radiative lifetime keep constant for samples with a high aluminium proportions in agreement with the QD zero-dimensional confinement.
Document type :
Journal articles
Superlattices and Microstructures, Elsevier, 2017, 104, pp.321-330. 〈10.1016/j.spmi.2017.02.043〉
Liste complète des métadonnées

http://hal.upmc.fr/hal-01492785
Contributor : Gestionnaire Hal-Upmc <>
Submitted on : Monday, March 20, 2017 - 3:37:29 PM
Last modification on : Thursday, July 20, 2017 - 2:59:26 PM
Document(s) archivé(s) le : Wednesday, June 21, 2017 - 1:17:33 PM

File

Ben_Daly_Power_density_and.pdf
Files produced by the author(s)

Identifiers

Collections

Citation

A. Ben Daly, H. Riahi, Frédéric Bernardot, Thierry Barisien, E. Galopin, et al.. Power density and temperature effects on the photoluminescence spectra of InAlAs/GaAlAs quantum dots. Superlattices and Microstructures, Elsevier, 2017, 104, pp.321-330. 〈10.1016/j.spmi.2017.02.043〉. 〈hal-01492785〉

Share

Metrics

Record views

93

Document downloads

21