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Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Abstract : It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any kind of substrates.
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https://hal.archives-ouvertes.fr/hal-02127433
Contributor : Gwénolé Jacopin Connect in order to contact the contributor
Submitted on : Friday, December 18, 2020 - 12:04:38 PM
Last modification on : Friday, February 4, 2022 - 3:28:24 AM
Long-term archiving on: : Friday, March 19, 2021 - 8:44:11 PM

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Alexandre Concordel, Gwenolé Jacopin, Bruno Gayral, Núria Garro, Ana Cros, et al.. Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, American Institute of Physics, 2019, 114 (17), pp.172101. ⟨10.1063/1.5094627⟩. ⟨hal-02127433⟩

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