Skip to Main content Skip to Navigation
Journal articles

Deep-UV nitride-on-silicon microdisk lasers

Abstract : Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor $\beta=(4±2) 10^{-4}$. The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon.
Document type :
Journal articles
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-01308209
Contributor : L2c Aigle Connect in order to contact the contributor
Submitted on : Wednesday, June 2, 2021 - 2:45:22 PM
Last modification on : Wednesday, January 19, 2022 - 3:08:01 PM
Long-term archiving on: : Friday, September 3, 2021 - 7:27:37 PM

File

srep21650.pdf
Publisher files allowed on an open archive

Licence


Distributed under a Creative Commons Attribution 4.0 International License

Identifiers

Citation

Julien Selles, Christelle Brimont, Guillaume Cassabois, Pierre Valvin, Thierry Guillet, et al.. Deep-UV nitride-on-silicon microdisk lasers. Scientific Reports, Nature Publishing Group, 2016, 6, pp.21650. ⟨10.1038/srep21650⟩. ⟨hal-01308209⟩

Share

Metrics

Record views

166

Files downloads

16